Photonics films

Gao L, Mbonu M, Cao L, Gao D (2008) Label-free colorimetric detection of gelatinases on nanoporous silicon photonic films. Anal Chem 80 1468-1473... 

Fukami K, Sakka T, Ogata YH, Yamauchi T, TsubokawaN (2009) Multistep filling of porous silicon with conductive polymer by electropolymerization. Physica Status Solidi (a) 206 1259 Gao L, Mbonu N, Cao L, Gao D (2008) Label-lfee colorimetric detection of gelatinases on nanoporous silicon photonic films. Anal Chem 80 1468 Ge M, Rong J, Fang X, Zhou C (2012) Porous doped sdicon nanowires for lithium ion battery anode with long cycle life. Nano Lett 12 2318... 

Egen, M. and Zentel, R. (2002) Tuning the properties of photonic films from polymer beads by chemistry. Chem. Mater., 14 (5), 2176-2183. 

Eaeh X-ray photon that is stopped by X-ray film produces a single developable silver halide grain in the film emulsion. A typical film thickness will stop approximately 60% of the photons. Film has an inherent background, which means that X-ray peaks only become visible once they exceed the noise level in this background. For a 50 X 50 beam this corresponds to something in the... 

Chien CC, Liu JH (2014) Optical behaviors of flexible photonic films via the developed multiple UV-exposed fabrications. Macromol Rapid Commun 35 1185-1190 Crivello JV (1983) Photoinitiated cationic polymerization. Annu Rev Mater Sci 13 173-190 de Gennes PG (1975) The physics of liquid crystals. Clarendon, Oxford Decker C (1996) Photoinitiated crosslinking polymerization. Prog Polym Sci 21 593-650 Decker C (2002) Kinetic study and new applications of UV radiation curing. Macromol Rapid Commun 23 1067-1093... 

Figure Bl.22.7. Left resonant seeond-hannonie generation (SHG) speetnimfrom rhodamine 6G. The inset displays the resonant eleetronie transition indueed by tire two-photon absorption proeess at a wavelength of approximately 350 mn. Right spatially resolved image of a laser-ablated hole in a rhodamine 6G dye monolayer on fiised quartz, mapped by reeording the SHG signal as a fiinetion of position in the film [55], SHG ean be used not only for the eharaeterization of eleetronie transitions within a given substanee, but also as a mieroseopy tool.

The reaction mechanisms of plasma polymerization processes are not understood in detail. Poll et al [34] (figure C2.13.6) proposed a possible generic reaction sequence. Plasma-initiated polymerization can lead to the polymerization of a suitable monomer directly at the surface. The reaction is probably triggered by collisions of energetic ions or electrons, energetic photons or interactions of metastables or free radicals produced in the plasma with the surface. Activation processes in the plasma and the film fonnation at the surface may also result in the fonnation of non-reactive products. 

DIeleman J, Blermann U K P and Hess P (eds) 1995 Photon-assisted processing of surfaces and thin films Proc. Symp. B E-MRS Cent. (1994) Appl. Surf. Sc/. 86 543-81... 

Dry-Film Resists Based on Radical Photopolymerization. Photoinitiated polymerization (PIP) is widely practiced ia bulk systems, but special measures must be taken to apply the chemistry ia Hthographic appHcations. The attractive aspect of PIP is that each initiator species produced by photolysis launches a cascade of chemical events, effectively forming multiple chemical bonds for each photon absorbed. The gain that results constitutes a form of "chemical amplification" analogous to that observed ia silver hahde photography, and illustrates a path for achieving very high photosensitivities. 

The physical techniques used in IC analysis all employ some type of primary analytical beam to irradiate a substrate and interact with the substrate s physical or chemical properties, producing a secondary effect that is measured and interpreted. The three most commonly used analytical beams are electron, ion, and photon x-ray beams. Each combination of primary irradiation and secondary effect defines a specific analytical technique. The IC substrate properties that are most frequendy analyzed include size, elemental and compositional identification, topology, morphology, lateral and depth resolution of surface features or implantation profiles, and film thickness and conformance. A summary of commonly used analytical techniques for VLSI technology can be found in Table 3. 

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