Periodic charge sequence

Definition 1.9 covers directly the case of copolymers and without loss of generality it is natural to assume that a periodic copolymer is a copolymer with a centered periodic charge sequence. Note that in this case if /t > 0, by restricting the attention only to S trajectories that are positive in 1,..., nT - 1, we have... 

The model has been applied on data from the blast furnace No 1 of Rautaruukki Steel in Raahe, Finland. This medium-sized bell-top furnace is equipped with movable armors with ten possible positions (MA=1,...,10), has a throat radius of Rt = 3.15 m and a radar that measures the burden level 0.6 m from the furnace throat wall. The furnace burden consists of sinter (S), pellets (P) and coke (C). The data evaluated are from two distinct periods where the furnace was operated with ten-dump charging sequences. The average burden-layer thicknesses, Azr, estimated from the radar signals, as well as the main characteristics of the charging programs are given in Table 1. 

Definition 1.9 A charge sequence u>n n is weakly inhomogeneous or periodic if there exists T G N such that u n+r = for every n. The minimal such T is called the period and it is denoted by T(w). A periodic sequence is said centered if = 0. 

The results of two different optimisations of the production of charged states >11+ are presented in Fig. 2b. The dashed curve is the TOF distribution obtained when optimising 80 independent phases across the spectrum. By contrast with the Fourier Transform-limited pulse, ions up to 25+ are present in the TOF distribution The corresponding pulse shape (as determined from the autocorrelation in Fig. 2c) is a sequence of two pulses of equal amplitude and separated by 500 fs. To test the importance of the time delay between the two pulses, we performed restricted optimisations where a periodic phase was applied across the spectrum along with a quadratic term. In this case the period and amplitude of the oscillatory part... 

DRAM (dynamic random access memory) — A type of a commonly used random access memory that allows the stored data to be accessed in any order, i.e., at random, not just in sequence. That type of computer memory stores each bit of data in a separate capacitor charged and discharged by only one logic element transistor. However, the DRAM capacitors are not ideal and hence leak electrons the information eventually fades unless the capacitor charge is periodically refreshed (circa every 64 ms). This makes this type of memory more power... 

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