PECVD silicon oxide film

PECVD silicon oxide films are used as a dielectric material for isolation of aluminum interconnections due to the low deposition temperature required (Al, m.p. =... 

Plasma Processes of Silicon Oxide (Si02) Film Growth PECVD from Silane-Oxygen Feedstock Mixtures and Conformal and Non-Conformal Deposition Within Trenches... 

In recent years, the IR absorption of fluorinated silicon oxide (FjcSiOj,) has been actively studied [68-74]. These films are very easily deposited by several PECVD or liquid-phase deposition (LPD) methods and are characterized by a low dielectric constant, which decreases with increased concentration of fluorine in the film. Decreasing the dielectric constant of the intermetal dielectric film is the most efficient way to reduce the adjacent wiring capacitance, which will improve the performance of submicrometer integrated circuits. However, the F SiOy films become reactive to water as the fluorine concentration increases. The film desorbs H2O and HF under thermal annealing after humidification, which causes reliability problems in the VLSI fabrication [68]. 

Dielectric Deposition Systems. The most common techniques used for dielectric deposition include chemical vapor deposition (CVD), sputtering, and spin-on films. In a CVD system thermal or plasma energy is used to decompose source molecules on the semiconductor surface (189). In plasma-enhanced CVD (PECVD), typical source gases include silane, SiH4, and nitrous oxide, N20, for deposition of silicon nitride. The most common CVD films used are silicon dioxide, silicon nitride, and silicon oxynitrides. 

Silicon Dioxide. Si02 layers produced by PECVD are useful for intermetal dielectric layers and mechanical or chemical protection and as diffusion masks and gate oxides on compound-semiconductor devices. The films are generally formed by the plasma-enhanced reaction of SiH4 at 200-300 °C with nitrous oxide (N20), but CO, C02, or 02 have also been used (238-241). Other silicon sources including tetramethoxysilane, methyl dimethoxysilane, and tetramethylsilane have also been investigated (202). Diborane or phosphine can be added to the deposition atmosphere to form doped oxide layers. 

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