PACVD coating

Diamond Hints, although not approaching bulk diamond, are harder than most refractory nitride and carbide thin films, which makes them attractive for tribological coatings. Transparency in the visible and infrared regions of the optical spectrum can be maintained and index-of-refraction values approaching that of bulk diamond have been measured. Electrical resistivities of diamond films have been produced within the full range of bulk diamond, and thermal conductivities equivalent to those of bulk diamond also have been achieved. As substrates for semiconductor electronic devices, diamond films can be produced by both the PACVD and IBRD techniques. 

Yehoda et al. ° presented a method to catalyze the nucleation and growth of diamond films in MW PACVD without seeding substrates. A thin film of Fe, Cu, Ti, Nb, Mo, or Ni was abraded or deposited onto SiC-coated substrate surfaces. The metal films resulted in varying degrees of diamond nucleation enhancement. A qualitative ordering of the best to the worst nucleating metals was established to be Fe, Cu, Ti, Ni, Mo to Nb at the substrate center (hot area), and Fe, Nb, Cu, Mo, Ti, to Ni away fi om the center (cold Fe exhibiting the most pronoimced effect on diamond... 

It should be noted that nc-MeN/a-Si3N4 nanocomposites have been extensively studied by many authors for a long time. Many papers that delve in the deposition of coatings using the methods of the UMS and plasma-enhanced chemical vapor deposition (PACVD) have been published [49-51]. 

Quede, A., Mutel, B., Supiot, R, Jama, C., Dessaux, O., Delobel, R., 2004. Characterization of organosilicon films synthesized by Nj-PACVD. Application to fire retardant properties of coated polymers. Surf. Coat. Technol. 181, 265-270. 

Hauert et al. (1997) examined the interaction of mouse fibroblast (3T3 cell line) with a-C H Si (0.2 atm% to 22.5 atm% silicon addition) obtained with PACVD system and reported that the cells proliferated well on the coated culture dishes and that no influence such as a toxic effect was observed from the Si-C bonds present on the surface to the growth and proliferation of the cells after 2 days of incubation. Hauert et al. (1997) concluded that the toxic effect described by Allen et al. (1995) was caused by bulk Si-C bonds not present in the a-C H Si thin film. 

The plasma assisted CVD (PACVD) has had, until now, very little impact, because of the problems of contamination by chlorine of Ti(C,N) or TiN coatings and because of the low ciystalUne nature of alumina coatings. 

Tsou, H. T., and W. Kowbel. "A hybrid PACVD SiC/CVD Si3N4SiC multilayer coating for oxidation protection of composites." Carbon 33.9 (1995) 1279-1288. 

Diamond and diamond-like carbon CVD, PACVD, ARE Protective coatings Fine particle for IR and UV optics superabrasives, AR coatings, high cutting tool for thermal conductivity aluminium alloys, substrates, micro- wear coatings for electronic devices computer memory discs ... 

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