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Oxide CMP Processes—Mechanisms and Models

One of the first and die most widely used CMP process, aside from the final step in the preparation of silicon wafers, is oxide CMP for back-end planarization after the initial oxide ILD deposition and between metal levels. As a result, oxide CMP is the most mature process, with the most fundamental studies having been performed in this area. Indeed, much of our understanding of the CMP of metals and other materials is derived from our understanding of oxide CMP. This chapter first presents the current understanding of the oxide CMP fundamentals. The discussion includes the mechanisms of both mato-ial removal and surface planarization. The second part of the chapter is devoted to the practice of oxide CMP, including reported results on planarization and polish rate performance of oxide CMP processes in industry. In addition, process integration, cost of ownership, manufacturability, and yield issues will be discussed. [Pg.129]

OXIDE CMP PROCESSES — MECHANISMS AND MODELS 5.1 THE ROLE OF CHEMISTRY IN OXIDE POLISHING... [Pg.130]

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Oxidation model

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