Optical ellipsometry

Porter M D, Bright T B, Allara D L and Chidsey C E D 1987 Spontaneously organized molecular assemblies. 4. Structural characterization of normal-alkyl thiol monolayers on gold by optical ellipsometry, infrared-spectroscopy, and electrochemistry J. Am. Chem. Soc. 109 3559-68... 

Whereas the XSW technique takes advantage of the standing wave established on the total reflection of X-rays from a mirror surface, a conceptually more straightforward approach is that of simply specularly reflecting an X-ray beam from an electrode coated with the film of interest, measuring the ratio of the intensities of the incident and reflected rays, and fitting the data, using the Fresnel equations, to a suitable model an approach similar to optical ellipsometry. 

The calculated real part and imaginary part e2( ) of the dielectric function are presented in Figure 11.10(b) Si E by dotted line and S2 E) by solid line. The ( ) value corresponding to energy of roughly 2eV corresponds to the optical refraction index of the film = 3.32 which was obtained by optical ellipsometry of the sample (2 = 632.8 nm, h(j)= 1.96 eV). As can be seen from Figure 11.10(b) e2( ) reveals a narrow peak at energy of 1.6 eV and a maximum at 2V. The latter can be explained by electron transition from the top of the valence band to the bottom of the conduction... 

In electrochemistry, because electrical quantities are easy to use and provide information directly relating to the behavior of the interface, they are particularly useful to identify interfacial processes. Contrary to other techniques, which require a vacuum chamber [low-energy electron diffraction (LEED), Auger electron spectroscopy, etc.] or electromagnetic radiation (optical ellipsometry, or X-rays EXAFS), which need no alteration of the electrode surface, electrical techniques can be used in situ on any surface state of the electrode. In addition, thanks to the advances in electronics, experimentalists can use more and more sophisticated... 

The prepared films [50] have been characterized with attenuated total reflection Fourier infrared spectroscopy, PL, optical ellipsometry, and scanning tunneling microscopy, and the results are consistent with the formation of stable, disordered monolayers of GdSe nanocrystals with high packing density. This assembly technique may have applications for the production of molecular electronic devices on semiconductor substrates [50]. 

Optical Ellipsometry of Adsorbed Films on Glass Fibers... 

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