Nonradiative multiphonon transitions

Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots (QDs) in SiOa matrix is considered. Interaction of confined holes with optical phonons is studied. The Huang-Rhys factor governing intraband multiphonon transitions induced by this interaction is calculated. The new mechanism of nonradiative relaxation based on the interaction with local vibrations in polar glass is studied for electrons confined in Si QDs. 

The excess free carriers (and excitons) do not represent stable excited states of the solids. A fraction of them recombine directly after thermahzation either radiatively or by multiphonon emission. In most materials, nonradiative transitions to defect states in the gap are the dominant mode of decay. The lifetime of free carriers T = 1/avS is determined by the density a of recombination centers, their thermal velocity v, and the capture cross section S, and may span 10-10 s. Electrons, captured by states above the demarcation level, and holes, captured by states below the hole demarcation level, may get trapped. The condition for trapping is given when the occupied electron trap has a very small cross section for recombining with a free hole. The trapping process has, until recently, not been well understood. 

Some relatively new analyses in the theory of nonradiative transitions have followed from the fact that there is no basic reason why our three primary processes cannot also take place in combination. Thus Gibb et al. (1977) propose a process of cascade capture into an excited electronic state and subsequent multiphonon emission from there. The results of this model were applied to capture and emission properties of the 0.75-eV trap in GaP. A more detailed analysis has since been given by Rees et al. (1980). Similarly, cascade capture followed by an Auger process with a free carrier seems a quite likely process. However, we are not aware that such a model has as yet been suggested. The third possible combination of processes, namely Auger with multiphonon, has been examined by Rebsch (1979) and by Chernysh... 

Recombination at and excitation from deep levels are emphasized. Nonradiative transitions at defect levels—Auger, cascade capture, and multiphonon emission processes—are discussed in detail. Factors to be considered in the analysis of optical cross sections which can give information about the parity of the impurity wave function and thus about the symmetry of a particular center are reviewed. 

Nonradiative transitions between the 4f levels of lanthanide ions are caused by multiphonon processes. In the case of band emissions, the quantum efficiency is commonly interpreted by the Mott s model. It should be noted that Struck and Fonger have shown that in fact an unified model can be used for these two types of emission. ... 

Ptutoyujum. (Am +). The energy level scheme and possible lasing transitions for Pu + are very similar to those of Np +. Prospective transitions include 6Hg/2+6H5/2, 9/2 7/2, and h7/2 Hc/2 For efficient fluorescence and laser action from either tne °Hg/2 or j/2 states, hosts should have low phonon frequencies to reduce nonradiative decay by multiphonon processes. Depending upon the host and the exact positions of higher-lying states, excited-state absorption may reduce or prevent net gain. 

The shorter lifetime in the glass ceramic is probably due to the effect of the oxide matrix incorporating the nanoparticles. Indeed, several studies have proved that the oxide glassy matrix interacted with the rare-earth ions situated inside the nanosized crystallites and influenced their spectroscopic properties [65, 66]. Indeed, those Er ions close to the nanocrystallite/glass interface are in distorted sites. As the distortions lower the symmetry, this could result in an increase in the electric dipole transition probability and consequently decrease the radiative lifetime. Moreover, those Er " " ions close to the surface of the crystallites can be sensitive to the presence of oxide ions in their coordination polyhedron, inducing multiphonon nonradiative contribution to the Er " " de-excitation and lowering the lifetime. 

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