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MOCVD Metal-organic chemical

MOCVD Metal-organic chemical vapor deposition... [Pg.231]

MOCVD (metal-organic chemical vapor deposition), OMVPE (organometallic vapor-phase epitaxy), and HVPE (hydride vapor-phase epitaxy) have some... [Pg.239]

Cyclopentadienyl compounds have been thoroughly investigated as suitable precursors to rare earth doped semiconductors in MOCVD (metal-organic chemical vapor deposition) or MOVPE (metal-organic vapor phase epitaxy) processes [283]. The use of btsa complexes for the same purpose has appeared in the literature very recently [285]. Typical process conditions are shown in Scheme 14. It was found that the carbon contamination of the deposited metal is less in the btsa case. [Pg.93]

Some main gronp metal MOCVD (Metal-organic chemical vapor deposition) precnrsors are listed in Table 1. [Pg.2631]

CVD = chemical vapor deposition DH = double heterostructure H = homojunction device ITO = indium tin oxide LEDs = light emitting diodes LPE = liquid phase epitaxy MBE = molecular beam epitaxy MOCVD = metal organic chemical vapor deposition PPV = p-phenylenevinyl-ene PEDOT = polyethylene dioxythiophene TFEL = Thin film electroluminescent VPE = vapor phase epitaxy. [Pg.6309]

MeOsalen = N,N/-ethylenebis(5-methoxysalicylideneiminate) Me3tacn = /V,/V/,/V//-trimethyl-1,4,7-triazacyclononane MMAO = modified methylaluminoxane MMTP = l-methoxy-2-methyl-l-trimethylsiloxypropene MOCVD = metal organic chemical vapor deposition Ms = mesityl = 2,4,6-trimethylphenyl NBD = norbornadiene NBS = iV-bromosuccinimide NitOH = p-nitrophenol Np = 3-neopentyl OAc = acetate OBz = benzoate... [Pg.543]

MOCVD metal-organic chemical vapour deposition... [Pg.866]

MOCVD metal-organic chemical vapor desposition... [Pg.428]

Content of atomic nitrogen species in the reaction MaN(, 2c M(g) + 6N + cN2 MOCVD metal organic chemical vapor deposition MBE molecule beam epitaxy Polymorphous transition from the cubic (a) to hexagonal ((3) structure for Mg3N2 at 823K has been observed in [20] and supported in [21]... [Pg.129]

MOCVD metal organic chemical vapour deposition MBE molecule beam epitaxy P value is reduced by a factor of 2.8 to take into account the tablet porosity Calculated in this work from experimental data presented in original publications... [Pg.177]

See other pages where MOCVD Metal-organic chemical is mentioned: [Pg.267]    [Pg.94]    [Pg.119]    [Pg.332]    [Pg.613]    [Pg.105]    [Pg.129]    [Pg.369]    [Pg.564]    [Pg.1370]    [Pg.2629]    [Pg.5201]    [Pg.65]    [Pg.244]    [Pg.323]    [Pg.267]    [Pg.514]    [Pg.1369]    [Pg.2628]    [Pg.5200]    [Pg.156]    [Pg.586]    [Pg.347]   


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