Mg doping

The result is the formation of a dense and uniform metal oxide layer in which the deposition rate is controlled by the diffusion rate of ionic species and the concentration of electronic charge carriers. This procedure is used to fabricate the thin layer of soHd electrolyte (yttria-stabilized 2irconia) and the interconnection (Mg-doped lanthanum chromite). 

To answer questions regarding dislocation multiplication in Mg-doped LiF single crystals, Vorthman and Duvall [19] describe soft-recovery experiments on <100)-oriented crystals shock loaded above the critical shear stress necessary for rapid precursor decay. Postshock analysis of the samples indicate that the dislocation density in recovered samples is not significantly greater than the preshock value. The predicted dislocation density (using precursor-decay analysis) is not observed. It is found, however, that the critical shear stress, above which the precursor amplitude decays rapidly, corresponds to the shear stress required to disturb grown-in dislocations which make up subgrain boundaries. 

The photogeneration of hydrogen from a water-methanol mixture using Nb-doped and Mg-doped FCjOj powder suspensions has been examined by Somorjai and coworkers The reaction was driven mainly by bandgap (2.2 eV) radiation. However, small amounts of were also formed upon sub-bandgap illumination. 

In addition to the processing technique, the properties of the oxides also changed by preparing them in a composite way. Arefian et al. [18] have synthesized SnO/ ZnO nanocomposite using the sonochemical method and studied the effects of temperature and power on the morphologies generated. Recently Mg doped ZnO... 

Mg2+ ion. 49 has been used to deposit MgO by atomic layer epitaxy,222 and is commonly employed as a />-type dopant for semiconductors, particularly GaAs,223 GaN,224,225 and AlGaN.226 In GaN, Mg doping induces a blue 2.8 eV photoluminescence band arising from donor-acceptor (D-A) pair recombination.227 It is likely that isolated Mg... 

Hwang, D.W., Kim, J., Park, T.J., Lee, J.S. 2002. Mg-doped WO, as a novel photocatalyst for visible light-induced water splitting. Catal Lett 80 53-57. 

Coordination causes electron-spin density redistribution in the N-O fragment the contribution of resonance structure II increase. The redistribution of spin density results in changes in the parallel component of the nitrogen hyperfine tensor. TEMPO and anthraquinone (AQ) have been used in this way to probe the Lewis acidity of alumina and Li and Mg doped alumina matrices.176 The differences in the Lewis acidic strength towards TEMPO and anthraquinone are discussed. An interesting study has appeared aimed to study the guest-host interaction between poly(amidoamine) dendrimers labelled with nitroxides and several porous solids including alumina.177... 

B. Temperature Dependence of Nonradiative Decays of MG Doped in the Glass-Forming Materials... 

K. Huang, J. B. Goodenough, A solid oxide fuel cell based on Sr- and Mg-doped LaGa03 electrolyte the role of a rare-earth oxide Buffer , Journal of Alloys and Compounds 303-304,454—464 (2000). 

Tinnemans, A.H.A., Koster, T.P.M., Thewissen, D.H.M.W. and Mackor, A. 1986. Photoelectrochemical properties of polycrystalline Mg-doped p-type iron(ni) oxide. Ber. Bunsenges. Phys.Chem. 90,383-390. 

GaN, relaxed homoepitaxial layers, Mg-doped bulk (low free-electron concentration) 3.1885 0.0003 5.1850 0.0001 [6]... 

FIGURE 2 10 K luminescence in the excitonic energy range of undoped, Si-doped and slightly Mg-doped GaN. The samples are grown by MBE on (0001) sapphire. After [35],... 

FIGURE 1 (a) A typical behaviour of persistent photoconductivity (PPC) in Mg-doped p-GaN grown by reactive MBE. (b) The dark conductivity as a function of temperature. The bottom curve (solid circles) represents data taken with the sample cooling down in the dark, while the top curve (open triangles) is for data taken with the sample illuminated at 10 K for about ten minutes and then warming up in the dark. After [5],... 

Photocurrent spectra of a p-type GaN epilayer have also been measured [7], From the onset of photoconductivity spectra, it was suggested that metastable centres at 1.1, 1.40, and 2.04 eV above the valence bandedge were responsible for the PPC in Mg-doped GaN, and that Ga vacancies may be responsible for PPC in n-type GaN [7], The spectral dependence of the optical cross section of the PPC related impurities in n-type epilayers has also been measured and the results are shown in FIGURE 4, from which an optical ionisation energy of about 2.7 eV was obtained [8], The correlation between the... 

Rubin et al [21], using a Kaufinan ion gun to produce N2+, report a 300 K hole mobility of 12 cm2/V s for an Mg-doped layer with p = 2 x 1016 cm 3. Surprisingly, however, for an undoped layer grown with a high N2+ flux, they get a 300 K mobility of about 150 cm2/V s, but at a very low hole concentration, p s 4 x 1012 cm 3. For this sample, the dominant acceptor has an activation energy of 0.29 eV, much deeper than that of Mg. 

A3.8 Characterisation of111-Vnitrides by capacitance transient spectroscopy D2 p-Type Mg-Doped GaN... 

For p-type Mg-doped GaN, DLTS measurements [15,19] have detected three deep levels with activation energies for hole emission to the valence band of -0.21 (DLPi), -0.32 (DLP2) and -0.42 eV (DLP3). The concentrations ranged from -4 x 1014 to -9 x 1014 cm 3. For the same Mg-doped GaN sample the ODLTS spectrum exhibited a dominant deep level near midgap (OLPt) with an optical threshold energy for hole emission to the valence band of -1.8 eV (180 K) its concentration was estimated to be -2.4 x 1015 cm 3. 

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