Metal heterostructures

Zhou C, Deshpande MR, Reed MA, Jones L, Tour JM (1997) Nanoscale metal/self-assem-bled monolayer/metal heterostructures. Appl Phys Lett 71 611-613... 

C. Zhou, M. R. Deshpande, M. A. Reed, L. Jones II, J. M. Tour, Nanoscale Metal/Self-Assembled Monolayer/ Metal Heterostructures, Appl. Phys. Lett. 1997, 71, 611-613. 

After discussing semiconductor/metal heterostructures let us now consider the case of semiconductor/semiconductor heterojunchons. The semiconductors will be characterized by the band gaps fg and E, where we arbitrarily assume that E > E, and with valence-HOMO band offset A v, dehned as the difference between VBM and HOMO, and the conduction-LUMO band offset A c, dehned as the difference between CBM and LUMO (see Fig. 4.28). Both AE v and AE c are dehned as posihve. 

Figure 1 2 3. The metal heterostructures at the atomic limit a superlattice of superconducting layers and a superlattice of superconducting spheres...

A. Bianconi Process of increasing the critical temperature Tc of a bulk superconductor by making metal heterostructures at the atomic limif United State Patent No. US 6, 265, 019 Bl. (priority date 07 12 1993). 

Sources of current measurements (4) S.J. Tans etal. Individual single-wall carbon nanotubes as quantum wires, Nature, 386, 474 77, 1997 (5) M.A. Reed, Electrical Properties of Molecular Devices, presented at 1997 DARPA ULTRA Program Review Conference, Santa Fe, NM, October, 1997 (6) M.A. Reed, Molecular-scale electronics, Proc. IEEE, 87, 652-658, 1999 (7) C. Thou, M.R. Deshpande, M.A. Reed, and J.M. Tour, Nanoscale metal/self-assembled monolayer/metal heterostructures, Appl. Phys. Lett., 71, 611-613, 1997 (8) C. Zhou, Atomic and Molecular Wires, Ph.D. dissertation, Yale University, 1999. With permission. 

Thissen P, Schindler B, Diesing D, Hasselbrink E (2010) Optical response of mettd-insulator-metal heterostructures and their application for the detection of chemicurrents. New J Phys 12 113014... 

Chakarvarti SK, Vetter J (1993) Microfabrication of metal-semiconductor heterostructures and tubules using nuclear track filters. J Micromech Microeng 3 57-59... 

Figure 6 Schematic diagram of the double-heterostructure p-n junction diode used for chemical sensing experiments. Electrical contact is made to the top and bottom surfaces with metal films. (Adapted from Ref. 3.)...

Many of the same ionic surfactants used for the assembly of mesostructured molecular sieve catalysts [1-4] and related bulk phases [5] can be intercalated in a variety of layered host structures [6]. We have recently demonstrated that some of these mesostructure - forming surfactants retain their structure directing properties when intercalated in the galleries of smectite clays. In a manner quite analogous to bulk mesostructure formation, the intercalated surfactants direct the assembly of an open framework metal oxide (silica) structure within the constrained gallery regions of the layered host (7). The resulting porous intercalates are referred to as porous clay heterostructures (PCH). 

It has been found for various III/V heterostructures that bandoffsets can be obtained via an internal reference rule for transition metals [18,19], This method was applied to predict the valence-band offset of the GaN/AIN heterostructure [20], However, as demonstrated by Heitz et al [10], the internal reference rule fails for the GaN/GaAs heterostructure. 

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