Magnetoresistance normal

Fig. 4.1. (a) Relative magnetoresistance normalized to the zero field values of (TMTSF)2N03 for different temperatures, (b) Oscillatory part of the curves in (a). Thick and thin arrows correspond to frequencies of 63 T and 248 T, respectively. From [92]... 

Investigations of the normal state magnetoresistance (MR) as well as the Hall effect and the thermal conductivity in the normal and superconducting mixed states give an important information about the electronic structure and the properties of vortex lattice of the investigated materials. 

Figure 41 shows that in the normal state HoNi2B2C has a considerably large magnetoresistance MR of negative sign. (The positive sign of MR in fig. 41a is due to the alternative normalization of this quantity which has been introduced so that data... 

Fig. 50. Normalized transverse magnetoresistance, Ap(H)/p(0) — [p(H, T)-p(0, Dl/pfO, T), vs. the applied magnetic field at low temperatures for YbNijBjC. The held direction is perpendicular and parallel to the c axis in (a) and (b), respectively (Yatskar et al. 1999).

Fig. 5. Set of isotherms R(T= const, B) of amorphous InOj, films [4]. (a) Magnetic field normal to the film (b) magnetic field parallel to the film. In the fields region I the material remains superconducting, label III marks the region of negative magnetoresistance. The theory [9, 10] relates to the vicinity of the boundary between the regions I and II in the geometry (a).

From here follow main goals in the SIT problem to find theoretical models which would lead to the negative magnetoresistance to trace how the specific SIT properties appear in the field-induced superconductor-normal metal transition while the normal metal is shifted toward the insulating state to find out whether the low dimensions of the films is crucial or the SIT can happen in 3D materials to find the explanation for the pair localization alternative to the boson-vortex duality. It seems that the first two goals are achieved. 

Fig. 4. Normalized magnetoresistance (left axis) at several temperatures below /iT. The relative height of the resistive jump from the ordered to the disordered state is shown on the right axis. Solid dots refer to the magnetoresistance measurements, while open dots refer to temperature sweeps at fixed magnetic fields. The dotted line is a guide to the eye.

Fig. 11.15. Normalized magnetoresistance as a function of the ferromagnetic metal fraction x (a) -Co-Si02 (b) -Ni-Ag (c) -Co-Ag (d) -Ni-Sio2. The results for Ni-samples are multiplied by 10 [87],...

Fig. 13 Correlation of the metamagnetomagnetism, metamagnetoelasticity, and colossal magnetoresistance in manganites. The vertical shifts of the magnetization curves are given for convenience only the curves of strain L and resistivity R are normalized by their values at zero field [30]...

Fig. 6) (a) A sketch of the radiation-induced magnetoresistance vs. the normalized inverse magnetic field. Note that the without radiation crosses the under irradiation at (B/B/) = n, as oscillatory minima occur at n + V4 and n - %. Imagine that B/B/ = constant = n and consider measurements where a small oscillatory variation is superimposed on the static field. Here, the oscillating component is arbitrarily assumed to have a time period, r, of 100 s. Panels (b) -(d) show the time variation of the total inverse field when the modulation amplitude is 0.5, 1, and 2 times the period of the radiation induced oscillations. 

Thin-film magnetoresistive sensors are prepared by processes similar to those used in microelectronics, so that it is reasonable to integrate AMR sensors with the evaluation circuit usually used in the bipolar CMOS technique. However, AMR sensors are usually offered in a simpler hybrid technology, in which both chips - sensor and electronics - can be fabricated by means of their optimized technology. Contamination risks and the large sensor size of about 1-2 mm2 normally make the production costs of one-chip solutions more costly. 

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