Lithography scanning beam

Lithography. Electron beam exposures were carried out with an IBM vector scan e-beam exposure tool at 20 keV. X-ray exposures were carried out under vacuum by Al-Ka radiation, and UV exposures with a Cannon PLA 500, Oriel illuminator, Hybrid Technology Group Model 345-10, or Optical Associates Inc. Model 780 in contact... 

Nanofabrication is the collection of techniques that generates reproducible patterns whose elements have sizes of 100 nm or less in at least one dimension. The majority of commercial nanofabrication takes place in the semiconductor industry. Essentially all integrated circuits are made hy a combination of electron-beam lithography (EBL), which generates nanoscale information in the form of features on photomasks, and photolithography, which replicates that information. We refer to these techniques as conventional methods of nano-fabrication. They are the workhorses of modem microelectronics, and are not likely to he replaced in the foreseeable future. Despite the ubiquity of scanning beam and photolithographic methods in commercial produaion, there are many circumstances outside of microelectronics where conventional techniques are prohihitively expensive, tm-available, or inapplicable. Further, processes developed for... 

Marrian C R K, Perkins F K, Brandow S L, Koloski T S, Dobisz E A and Calvert J M 1994 Low voltage electron beam lithography in self-assembled ultrathin films with the scanning tunneling microscope Appi. Rhys. Lett. 64 390... 

Figure 7 shows an aberration-free intensity distribution at the focus of a typical objective lens similar to that used for DLW lithography. Calculations were carried out using a vectorial Debye theory, which accounts for the polarization effects. For the linearly polarized wave it can be seen that the spot is elongated along the polarization vector. To reduce this asymmetry, a X/4-plate can be used to convert the polarization of the incident beam to circular, which can be interpreted as a combination of two mutually perpendicular linearly polarized components. Thus, width of the photomodified line becomes independent of the beam scanning direction in the sample. 

Sun, S., and G.J. Leggett. 2004. Matching the resolution of electron beam lithography by scanning near-field photolithography. Nano Lett. 4 1381-1384. 

Fig. 1. The accuracy of e-beam lithography is illustrated in the scanning electron micrograph (top). The size of the features formed in the silicon oxide is 0.5 pm and the typical animal cell (a fibroblast) has a diameter of 20 pm. This kind of cell adheres actively to surfaces, forming thin filopodia which here have all attached to the micro-hillocks. Semiconductor technology is capable of manufacturing micro-electrodes, sensors, pores and electronic networks with sizes smaller than that of the cell. The lower illustration summarises the main detection and measuring methods currently in use...

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