Laser recrystallization method

After deposition of polysilicon by LPCVD, phosphorus ions are implanted in order to determine the threshold voltage. A finely focused CW argon laser beam was scanned on the layer. Successive fabrication steps are carried out by the standard N-chan-nel MOS LSI technology. The pixel electrode is formed with the ITO layer. 

Usually, the gate and data driver circuits are mounted on the periphery of the p-Si TFT switch matrix addressed liquid crystal display panel. 

Gate electrodes Pixel electrode (ITO) -Gloss substrate 

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The fabrication of a polycrystalline silicon film can be achieved through various CVD methods or crystallization of amorphous silicon. But these processes require high temperatures of at least 300°C, making the deposition only possible on glass but not plastic. A relatively new technique called laser recrystallization has been devised to crystallize a precursor amorphous silicon film by localized heating without damaging the plastic substrate. A transfer process has also been developed to fabricate poly-Si TFT circuits on plastic substrates [14]. 

The basic equations will be reviewed, and applied to laser annealing. Laser annealing is, among other things, a promising method of recrystallizing the damaged surface layers of a... 

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