Lanthanum vanadate

Cheng Z, Zha S, Aguilar L, and Liu M. Chemical, electrical, and thermal properties of strontium doped lanthanum vanadate. Solid State Ionics 2005 176 1921-1928. 

It has been seen in the previous section that the ratio of the onsite electron-electron Coulomb repulsion and the one-electron bandwidth is a critical parameter. The Mott-Hubbard insulating state is observed when U > W, that is, with narrow-band systems like transition metal compounds. Disorder is another condition that localizes charge carriers. In crystalline solids, there are several possible types of disorder. One kind arises from the random placement of impurity atoms in lattice sites or interstitial sites. The term Anderson localization is applied to systems in which the charge carriers are localized by this type of disorder. Anderson localization is important in a wide range of materials, from phosphorus-doped silicon to the perovskite oxide strontium-doped lanthanum vanadate, Lai cSr t V03. 

Simner SP, Hardy JS, Stevenson JW, and Armstrong TR. Sintering of lanthanum chromite using strontium vanadate. Solid State Ionics 2000 128 53-63. 

To evaluate the factors affecting the structural stability of some crystalline materials that are potential hosts for radioactive wastes, the crystal structures of a series of 3+p5 xv5+o compounds, where A is lanthanum or a member of the rare-earth series, were determined. The end-member phosphates (APO4) have the monoclinic Monazite structure (P2 /n) for A La, Ce-Gd, and the tetragonal Zircon structure (l4]/amd) for A Tb - Lu. The corresponding vanadates have the Monazite structure only for LaVO, and the Zircon structure for A = Ce - Lu. When the end members are iso-structural, e.g., LaPO /LaVO, Monazite, YbPC /YbVOA,... 

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