ISFET ion-sensitive field-effect

FIP Functional group imprinted polymer ISFET Ion-sensitive field effect transistor... 

ISFET ion sensitive field effect transistor yttria yttrium oxide... 

Fig. 2.16. Ion-sensitive field effect transistor (intersection and symbol), (a) n-p-n transistor, (b) IGFET (MOSFET), (c) ISFET.

Explain the main mechanistic differences between a glass membrane electrode and an ion-sensitive field effect transistor (ISFET). 

The measurement of changes of the surface potential Vo at the interface between an insulator and a solution is made possible by incorporating a thin film of that insulator in an electrolyte/insulator/silicon (EIS) structure. The surface potential of the silicon can be determined either by measuring the capacitance of the structure, or by fabricating a field effect transistor to measure the lateral current flow. In the latter case, the device is called an ion-sensitive field effect transistor (ISFET). Figure 1 shows a schematic representation of an ISFET structure. The first authors to suggest the application of ISFETs or EIS capacitors as a measurement tool to determine the surface potential of insulators were Schenck (15) and Cichos and Geidel (16). 

ION-SELECTIVE ELECTRODES (ISEs) AND ION-SENSITIVE FIELD-EFFECT TRANSISTORS (ISFETs)... 

Ion-selective membranes can be used in two basic configurations. If the solution is placed on either side of the membrane, the arrangement (e.g., Fig. 6.16a) is symmetrical. It is found in conventional ion-selective electrodes in which the internal contact is realized by the solution in which the internal reference electrode is immersed. In the nonsymmetrical arrangement (Fig. 6.16b), one side of the membrane is contacted by the sample (usually aqueous), and the other side is interfaced with some solid material. Examples of this type are coated wire electrodes and Ion-Sensitive Field-Effect Transistors (ISFETs). 

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