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Ionized-cluster beam deposition

Isao Yamada, Ionized-Cluster Beam Deposition... [Pg.650]

IONIZED-CLUSTER BEAM DEPOSITION AND EPITAXY by Toshinori Takagi... [Pg.244]

Toward Organic Electronic Devices Using an Ionized Cluster Beam Deposition Method... [Pg.729]

Nason et al. [20] reported that polycrystalline thin films (1-10 /am) of the nonlinear material 2-methyl-4-nitroaniline were deposited on Ag, Cu, and Si by conventional and ionized cluster beam deposition. The use of ions was found to promote a highly oriented film, with only a single x-ray diffraction orientation (112) being observed at reduced temperatures (-50 C). The effect of the ions on the physical microstructure of the films was to densify the film and reduce the size of the microcrystals. The films had powder-like optical properties and displayed a strong second harmonic from an N YAG laser. [Pg.737]

Tetracyanoquinodimethane (TCNQ) and related compounds [10], have been extensively investigated in the last decades. When combined with tetrathiafulvalene (TTF) and some metals such as Ag and Cu, it may show very useful properties such as electrical and optical bistability. However, to apply these organic thin films in electronic or photoelectric devices, it is of great importance that the films should exhibit few impurities and defects and it is also desired that the films crystallinity can be controlled. For these reasons, we explore an ionized cluster beam deposition method to fabricate organic crystalline thin films. [Pg.739]

Gao, H. J., Xue, Z. Q., and Pang, S. J., Ionized cluster beam deposition-time of flight mass spectrometer system for fabrication of ultrafine metal particle-organic thin films. Vac. Sci. Technol. (China), 13, 204-210 (1993). [Pg.760]

Physical vapor deposition (PVD) includes the following methods [IJ Evaporation in its simplest form involves heating the source material in vacuum to a temperature at which its partial pressure reaches about 10 - mbar. The preci.se control of composition using multiple. sources for multicomponent films is difficult. A sophisticated version of this method is molecular beam epitaxy (MBE), (requiring UHV conditions, precise control of the temperature of the sources, computer controlled shutters, etc.) capable of producing layers from multi- to monoatomic thicknes.ses. Laser-ablation-a.ssi.sted deposition (LAPVD) and cluster evaporation with ionized cluster beam deposition are among the new developments used to grow films by evaporation. [Pg.298]

Ion beam-enhanced deposition Ion beam surface treatinent Integrated circuit Ionized cluster beam (deposition)... [Pg.763]


See other pages where Ionized-cluster beam deposition is mentioned: [Pg.277]    [Pg.182]    [Pg.365]    [Pg.730]    [Pg.731]    [Pg.733]    [Pg.735]    [Pg.737]    [Pg.739]    [Pg.741]    [Pg.743]    [Pg.744]    [Pg.745]    [Pg.747]    [Pg.749]    [Pg.751]    [Pg.753]    [Pg.755]    [Pg.757]    [Pg.759]    [Pg.761]    [Pg.131]    [Pg.64]    [Pg.265]    [Pg.380]    [Pg.403]    [Pg.420]   
See also in sourсe #XX -- [ Pg.380 ]




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