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Ion Damage Energy

It should be noted that the damage energy of a PKA with energy E, v(E), is closely related to the PKA s total nuclear stopping. This can be expressed as [Pg.83]

To convert to vv s) values into laboratory damage energy vp( ), we will make use of the relationship [Pg.83]

After Mayer et al., Ion Implantation in Semiconductors, (Academic Press, New York, 1970). Data supplied by P.V. Thomsen (Aarhus University) [Pg.84]

These energy-loss values include the nuclear-collision contributions from the whole cascade, taking into account the electronic losses suffered by the knock-on atoms. These values of for Group IV elements can be used for the adjacent Group III of V elements without introducing significant errors. [Pg.84]


The simplest calculation of radiation damage involves only monatomic materials and has been described by many authors (17—20). For polyatomic materials, a calculation procedure for estimating damage energy from ion implantation has been outlined (8). The extension of this formalism (8) to direct calculations of damage energies in polyatomic materials has been addressed by several authors (11,21—24). [Pg.395]

Fig. 13.5. Marker mixing data of several different markers in amorphous Si. This data shows (a) the relationship between the effective ion mixing diffusion coefficient, Dt, and ion mixing dose, tp, and (b) the effective mixing parameter, Dthp, and the damage energy deposited per unit length, FD (from Matteson et al. 1981)... Fig. 13.5. Marker mixing data of several different markers in amorphous Si. This data shows (a) the relationship between the effective ion mixing diffusion coefficient, Dt, and ion mixing dose, tp, and (b) the effective mixing parameter, Dthp, and the damage energy deposited per unit length, FD (from Matteson et al. 1981)...
Another unique application of ion irradiation is the in situ observation of microstructural evolution using a TEM combined with a connected accelerator (e.g. Ishino et al., 1983). This technique allows observation of microstructural evolution directly during ion irradiation by injecting ions with energies in the order of lOkeV to lOMeV into a thin-foil sample in a TEM. This method provides information about interactions of dislocations and cascades under ion irradiation. Continuous observations over time permit lifetime measurements of each cascade-induced vacancy cluster elucidating the nucleation and growth of the clusters under cascade damage (Ishino et a/.,1986). [Pg.191]


See other pages where Ion Damage Energy is mentioned: [Pg.83]    [Pg.83]    [Pg.83]    [Pg.83]    [Pg.83]    [Pg.83]    [Pg.83]    [Pg.83]    [Pg.395]    [Pg.491]    [Pg.371]    [Pg.270]    [Pg.93]    [Pg.231]    [Pg.119]    [Pg.122]    [Pg.124]    [Pg.395]    [Pg.415]    [Pg.432]    [Pg.78]    [Pg.14]    [Pg.80]    [Pg.427]    [Pg.477]    [Pg.324]    [Pg.15]    [Pg.23]    [Pg.83]    [Pg.85]    [Pg.91]    [Pg.127]    [Pg.184]    [Pg.186]    [Pg.70]    [Pg.164]    [Pg.312]    [Pg.519]    [Pg.15]    [Pg.23]    [Pg.83]    [Pg.91]    [Pg.127]    [Pg.184]    [Pg.186]    [Pg.723]    [Pg.88]    [Pg.189]   


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Damage energy

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