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Innes

Abramson E, Field R W, Imre D, Innes K K and Kinsey J L 1985 Fluorescence and stimulated emission... [Pg.1040]

Callomom J H and Innes K K 1963 Magnetic dipole transition in the electronic spectrum of formaldehyde J. Mol. Spectrosc. 10 166-81... [Pg.1148]

Figure Bl.16.16. TREPR spectrum of TEMPO radicals in 1,2-epoxypropane solution with benzophenone, 1 ps after 308 inn laser flash. Reprinted from [45],... Figure Bl.16.16. TREPR spectrum of TEMPO radicals in 1,2-epoxypropane solution with benzophenone, 1 ps after 308 inn laser flash. Reprinted from [45],...
Interest in AIN, GaN, InN and their alloys for device applications as blue light-emitting diodes and blue lasers has recently opened up new areas of high-pressure synthesis. Near atmospheric pressure, GaN and InN are nnstable with respect to decomposition to the elements far below the temperatures where they might melt. Thus, large boules of these materials typically used to make semiconductor devices caimot be grown from the... [Pg.1960]

Stampfl C, van de Walle C G, Vogel D, Kruger P and Pollmann J 2000 Native defects and impurities in InN First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials Phys. Rev. B 61 R7846-9... [Pg.2230]

Figure C2.16.2 shows tire gap-lattice constant plots for tire III-V nitrides. These compounds can have eitlier tire WTirtzite or zincblende stmctures, witli tire wurtzite polytype having tire most interesting device applications. The large gaps of tliese materials make tliem particularly useful in tire preparation of LEDs and diode lasers emitting in tire blue part of tire visible spectmm. Unlike tire smaller-gap III-V compounds illustrated in figure C2.16.3 single crystals of tire nitride binaries of AIN, GaN and InN can be prepared only in very small sizes, too small for epitaxial growtli of device stmctures. Substrate materials such as sapphire and SiC are used instead. Figure C2.16.2 shows tire gap-lattice constant plots for tire III-V nitrides. These compounds can have eitlier tire WTirtzite or zincblende stmctures, witli tire wurtzite polytype having tire most interesting device applications. The large gaps of tliese materials make tliem particularly useful in tire preparation of LEDs and diode lasers emitting in tire blue part of tire visible spectmm. Unlike tire smaller-gap III-V compounds illustrated in figure C2.16.3 single crystals of tire nitride binaries of AIN, GaN and InN can be prepared only in very small sizes, too small for epitaxial growtli of device stmctures. Substrate materials such as sapphire and SiC are used instead.
ANHBIOHCS - BETA-LACTAMS - BETA-LACTAMASE INHIBITORS] (Vol 3) Epitizide-INN [1764-85-8... [Pg.366]

CINNAMIC ACID, CINNAMALDEHYDE AND C INN AMYL ALCOHOL] pol 6) [FEEDSTOCKS - COAL CHEMICALS] pol 10)... [Pg.379]

Mono-, di-, and trivalent bromides and iodides may be made by methods similar to the chlorides. The lower valence salts also disproportionate in water. Indium trifluoride [7783-52-0] InF., is sparingly soluble in water. It forms an ammonium double salt, SNH F TnF. [15273-84-4] which decomposes on heating to indium nitride [25617-98-5] InN. [Pg.81]


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See also in sourсe #XX -- [ Pg.19 ]

See also in sourсe #XX -- [ Pg.75 ]

See also in sourсe #XX -- [ Pg.411 , Pg.412 ]

See also in sourсe #XX -- [ Pg.1777 ]




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AlN-InN

Band Offsets at Interfaces between AIN, GaN and InN

Bandedge and Optical Functions of InN

Basic Physical Properties of InN

Brodie-Innes

Electrical Transport Properties of InN

Holiday Inn

InN nanobelts

InN-GaN

International Nonproprietary Names INNs)

Mac Innes

Nitride InN

Raman and IR Studies of InN

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