Electrical Transport Properties of InN

With structural quality in most of the non-equilibrium growth processes compromised, microstructure and point defects largely dominate the electrical characteristics of most films described in the literature, where InN is typically reported as highly conductive n-type and polycrystalline. 

The strongest evidence lies in the systematic reduction of electron concentration found in reactively sputtered films as nitrogen density is increased in the growth plasma [1]. 

TABLE 1 Electrical properties oflnN thin films at 300 K. 

Method of growth Electron concentration (cm 3) Electron mobility (cm2/V s) Conductivity (S/cm) Ref (year) 

FIGURE 1 Electron drift (solid lines) and Hall (broken lines) mobilities calculated for InN as a function of temperature. Left for n = 5 x 10 6 cm-3 and compensation ratios of zero (upper) and 0.60 right for n = 8 x 1016 cm 3 and compensation ratios zero (upper), 0.30, 0.60 and 0.75. Calculated curves from [6], experimental data from [9], 

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