Band Offsets at Interfaces between AIN, GaN and InN

Interface AEy Orientation Substrate/lattice constant Technique 

The results of XPS studies by Martin et al [3] give the only experimental value of AEy = 1.05 0.25 eV for (0001) InN GaN (see TABLE 2). Wang et al [16] calculated a value of AEy = 0.04 eV for this interface based on differences in the Au/InN and Au/GaN Schottky barriers ( j Bp). The LMTO and LAPW studies by Albanesi et al and Wei et al indicated more substantial offsets of 0.51 and 0.48 0.1 eV, respectively, for the (110) and (0001) interfaces. Van de Walle et al [17] investigated the effect of strain on the (110) GaN InN interface using the PWP method in a manner similar to that of Nardelli et al [12], For GaN InN interfaces strained to the lattice constant of GaN and InN, Van de Walle et al observed a shift in the valence band offset from -0.08 to 0.21 eV, respectively, and concluded that the natural band offset (AEV, ) was 0.34 0.1 eV. Nardelli et al [12] also determined the band offset of AEy = 0.70 eV for a (0001) InN GaN interface, strained to the lattice constant of AIN, which approaches the experimental value reported by Martin et al [3], Van de Walle et al [17] have determined a value of AEy = 0.06 0.1 eV for the ki0.2Gao. N/GaN interface. 

PWP = plane wave pseudopotential method Au p = Au Schottky barrier theory. 

TABLE 3 Valence band offsets for interfaces between AN and InN. 

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Cl. 1 Ohmic contacts to GaN and the III-V nitride semiconductor alloys C1.2 Schottky barrier contacts to GaN Cl.3 Band offsets at interfaces between AIN, GaN and InN... 

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