InGaAsP laser

A review of InGaAsP laser diodes, suitable for operation over the range l.O— 1.7 pm, has been published. 9mW of laser output were obtained from a CdS... 

A novel device application (36) involves a mass transport phenomenon (37). A buried "terrace"-type 1.3 pm InGaAsP laser was grown (36) by H2 "vapor" transport of InP from an InP wafer onto an etched LPE laser. Lasing threshold currents as low as 9.5 mA were reported (36). 

T.J. Johnson, F.G. Wienhold, J.P. Burrows, G.W. Harris FM spectroscopy at 1.3 mm using InGaAsP lasers a prototype field instrument for atmospheric chemistry, Appl. 0/7f. 30(1991)407-413. 

Fig. S3. Experiment for mode selection of an InGaAsP laser by Ei absorption (Zhou and Auzel 1993).

Fig. 54. Emission spectrum of an InGaAsP laser (a) without and (b) with a LiYF4 Ei 25%/ECMYAG combination (lmm/216 xm) inside the laser cavity (Zhou and Auzel 1993).

Currently there are GaAlAs lasers operating in the wavelength region from 790 to 920 nm, and InGaASP lasers in the 1.1-1.6-jLtm region. While diode lasers have some drawbacks as spectral sources, their simplicity and low cost make them quite useful. Much work has been done also in putting these lasers in external cavities to decrease their linewidth and eliminate all extraneous mode structures. 

Indium gaUium arsenide phosphide (InGaAsP) lasers NIR (1,200-2,000 nm) From 10 mW up to 1 W(CW) Room temperature, low cost... 

Fig. 11. Schematic diagram illustrating the preparation sequence of an InGaAsP/InP-based buried heterostmcture laser, (a) The active and waveguide...

InP/InGaASP long-wavelength lasers and detectors InP/InGaAs quantum wells, solar cells, detectors GaAs on Si wafers GaAs/InGaP HBTs... 

R.J. Nelson and N.K. Dutta, Review of InGaAsP/InP Laser Structures and Comparison of Their Performance... 

Scheuer, J. Green, W. M. J. DeRose, G. Yariv, A., InGaAsP annular Bragg lasers Theory, applications and modal properties, IEEE J. Sel. Top. Quantum Electron. 2005, 11,476 484... 

See also Arsenic (As) Gallium (Ga) Indium (In) Phosphorus (P) InGaAsP semiconductor, in laser communication systems, 22 180 InGaAs semiconductor... 

Cao, J.R., Kuang, W., Choi, S.-J., Lee, P.-T., O Brien, J.D., Dapkus, P.D., 2003, Threshold dependence on the spectral alignment between the quantum-well gain peak and the cavity resonance in InGaAsP photonic crystal lasers, Appl. Phys. Lett. 83(20) 4107-4109. 

Painter, O.J., Husain, A., Scherer, A., O Brien, J.D., Kim, L, and Dapkus, P.D., 1999, Room temperature photonic crystal defect lasers at near-infrared wavelengths in InGaAsP, J. Lightwave Technol. 17(ll) 2082-2088. 

Details of the laser system and the operating conditions employed to control the lasers have been described previously [6]. The system includes two independently operated distributed feedback (DFB) InGaAsP diode lasers tuned over the desired transitions near 1.34 p,m and 1.39 p,m i/ + I s bands)... 

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