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InGaAsP

Figure C2.16.3. A plot of tire energy gap and lattice constant for tire most common III-V compound semiconductors. All tire materials shown have cubic (zincblende) stmcture. Elemental semiconductors. Si and Ge, are included for comparison. The lines connecting binary semiconductors indicate possible ternary compounds witli direct gaps. Dashed lines near GaP represent indirect gap regions. The line from InP to a point marked represents tire quaternary compound InGaAsP, lattice matched to InP. Figure C2.16.3. A plot of tire energy gap and lattice constant for tire most common III-V compound semiconductors. All tire materials shown have cubic (zincblende) stmcture. Elemental semiconductors. Si and Ge, are included for comparison. The lines connecting binary semiconductors indicate possible ternary compounds witli direct gaps. Dashed lines near GaP represent indirect gap regions. The line from InP to a point marked represents tire quaternary compound InGaAsP, lattice matched to InP.
In photodetectors (qv) for photocouplers, optical switches, fiber optics, communication, and imaging, the materials used are InGaAs, InGaAsP, and... [Pg.164]

InGaAsP DH InP InP (TS) yes LPE OI MOCVD small emission area geometry... [Pg.118]

Fig. 11. Schematic diagram illustrating the preparation sequence of an InGaAsP/InP-based buried heterostmcture laser, (a) The active and waveguide... Fig. 11. Schematic diagram illustrating the preparation sequence of an InGaAsP/InP-based buried heterostmcture laser, (a) The active and waveguide...
Figure 4 Spatial variation of PL intensity of an InGaAsP epitaxial layer on a 2-in InP substrate shows results of nonoptimal growth conditions. (Data from a Waterloo Scientific SPM-200 PL mapper, courtesy of Bell Northern Research)... Figure 4 Spatial variation of PL intensity of an InGaAsP epitaxial layer on a 2-in InP substrate shows results of nonoptimal growth conditions. (Data from a Waterloo Scientific SPM-200 PL mapper, courtesy of Bell Northern Research)...
InP/InGaASP long-wavelength lasers and detectors InP/InGaAs quantum wells, solar cells, detectors GaAs on Si wafers GaAs/InGaP HBTs... [Pg.101]

R.J. Nelson and N.K. Dutta, Review of InGaAsP/InP Laser Structures and Comparison of Their Performance... [Pg.652]

Roelkens, G. et al. 2005. Integration of InP/InGaAsP photodetectors onto silicon-on-insulator waveguide circuits. Opt. Express 13 10102-10108. [Pg.447]

Circular Bragg nanolasers (CBNLs) of several geometries and Bragg reflector orders were fabricated within a thin membrane of InGaAsP semiconductor material21. A cross-section of the semiconductor epitaxial structure used is illustrated... [Pg.326]

Fig. 12.7 InGaAsP/InP multi quantum well semiconductor structure process (a) Si02 etch mask deposition (b) PMMA spin coating (c) E beam lithography and develop (d) Si02 etch (e) PMMA stripping (f) InGaAsP membrane etch (g) Si02 stripping (h) Chip flipping and bonding to sapphire (i) InP substrate etch (j) Adhesive etch... Fig. 12.7 InGaAsP/InP multi quantum well semiconductor structure process (a) Si02 etch mask deposition (b) PMMA spin coating (c) E beam lithography and develop (d) Si02 etch (e) PMMA stripping (f) InGaAsP membrane etch (g) Si02 stripping (h) Chip flipping and bonding to sapphire (i) InP substrate etch (j) Adhesive etch...
Scheuer, J. Green, W. M. J. DeRose, G. Yariv, A., InGaAsP annular Bragg lasers Theory, applications and modal properties, IEEE J. Sel. Top. Quantum Electron. 2005, 11,476 484... [Pg.335]

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See also in sourсe #XX -- [ Pg.177 , Pg.178 , Pg.183 , Pg.189 ]



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