Induced density of interface state

Of importance under that respect is the induced density of interface state (IDIS) model [105, 106] that states that when an organic material is put into contact with a metal surface, the tails of the metal orbitals tunnel into the HOMO-LUMO gap of the organic solid, which has the effect of broadening the molecular levels. As a result, the initial discrete distribution turns to a continuum DOS with, in particular, a nonzero DOS in the HOMO-LUMO gap. This DOS can play the same role as the surface states in the model of Bardeen. 

Vazquez H, Dappe YJ, Ortega J, Flores F (2007) Energy level alignment at metal/oiganic semiconductor interfaces Pillow effect, induced density of interface states, and chtiige neutrality level. J Chem Phys 126 144703... 

Similarly, in a metal/semiconductor junction, in which the metal work function lies between the valence band maximum and the conduction band minimum, the tails of the metallic wave function decrease exponentially in the adjacent semiconductor gap states, inducing transfer of charge, which in turn creates the dipole. The mismatch between the metal Fermi level and E is reduced by this dipole (by a factor inversely proportional to the semiconductor s optical dielectric constant, s o, in first approximation [51]). Only in the case of semiconductors with a large optical dielectric constant or high density of interface states is the Fermi level almost completely pinned at E- In this case, since E is an intrinsic property of the semiconductor, the Schottky barrier height of a particular semiconductor is independent of the metal (and its work function) utilized as contact. In order to define the CNL, one... 

S is the distance between the semiconductor surface and the reaction plane at OHP, and Np(x = 0) is the number of photoexcited minority carriers per unit volume in the surface region of the semiconductor which arrive from the interior of the semiconductor to this region. f E, hv) is the Fermi distribution of photoexcited minority carrier. This quantity, Np x = 0), depends on the intensity, energy, and absorption coefficient of incident light, diffusion length of electron in the semiconductor, and its band gap, etc. Furthermore, it depends on the charge transfer phenomena and the surface recombination rate at the interface. The surface recombination rate constant depends on the induced density of surface states due to adsorbed anions at the electrodesolution interface. The recombination rate constant can be expressed as... 

Figure 10 presents the interface shape of the rivulet for wall superheat as 0.5 K and Re = 2.5. Here also presented the data on pressure in liquid and heat flux density in rivulet cross-section. The intensive liquid evaporation in near contact line region causes the interface deformation. As a result the transversal pressure gradient creates the capillarity induced liquid cross flow in direction to contact line. Finally the balance of evaporated liquid and been bring by capillarity is established. This balance defines the interface shape and apparent contact angle value.For the inertia flow model, the solution is obtained from a non-stationary system of equations, i.e., it is time-dependable. In this case the disturbances in flow interface can create the wave flow patterns. The solutions of unsteady state liquid spreading on heat transfer surface without and with evaporation are presented on Fig. 11. When the evaporation is not included (for zero wall superheat) the wave pattern appears on the interface. When the evaporation includes, the apparent contact angle increase immediately and deform the interface. It causes the wave suppression due to increasing of the film curvature.

---