Indirect tunneling processes

This lowering may be explained by induction of localized electronic states with their energy levels lying within the tunneling barrier. They therefore act as resonating states for indirect tunneling processes. A comparison with photoelectrochemical results [1,... 

C/t<500mV) is only possible when localized electronic states within the passive layer exist. They act as resonance centers for indirect tunneling processes. Therefore, the topographic images of such surfaces represent the interface metal/oxide and not the passive layer itself. 

We have considered direct electron tunneling from a donor to an acceptor under the influence of radiation. Along with this some indirect processes of electron tunneling with the participation of light are possible. For instance, the absorption of light may result in the excitation of the donor... 

Electrochemical measurements of the type described earlier give indirect evidence about dissolution processes. More direct chemical information can be obtained from in-situ spectroscopies, in particular from IR and Raman methods. Chazalviel and coworkers have showed the power of this approach in studies on silicon and GaAs [73,98,99]. Electrochemical and spectroscopic techniques are macroscopic methods giving a view of the whole electrode surface. To study semiconductor dissolution at the microscopic (atomic) level, one needs techniques such as scanning tunneling microscopy (STM) and atomic force microscopy (AFM). The anodic and chemical dissolution of sihcon has been studied in very elegant work by Allongue and coworkers [100-102]. 

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