ICP CVD

It seems to have been established that the bias to the substrate is important in increasing the cBN yield in the case of RF plasma CVD (277), electron cyclotron resonance (ECR) plasma CVD (277,280,290,291), and inductively coupled RF plasma (ICP) CVD (279,292). A suitable amount of dilution gas such as Ar and a high ion flux to the substrate promote cBN formation (263,280). The hydrogen content in the gas needs to be small because BN deposition with a bias was difficult due to etching of the film by the gas (Fig. 46) (292). 

Whereas a microwave plasma is most commonly used for the PE-CVD of diamond films, an ECR is the only plasma that is used for diamond deposition below 1 Torr [27-29]. Although Bozeman et al. [30] reported diamond deposition at 4 Torr with the use of a planar ICP, there have been a few reports that describe the synthesis of diamond by low-pressure ICP. Okada et al. [31-33] first reported the synthesis of nanocrystalline diamond particles in a low-pressure CH4/CO/H2 ICP, followed by Teii and Yoshida [34], with the same gas-phase chemistry. 

Chemical vapor deposition (CVD) using TiC was used to prepare Ti/Si02, Ti/MCM-41, and Ti/MCM-48 catalysts. These catalysts were characterized by inductively coupled plasma-atomic emission spectroscopy (ICP-AES), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy, nitrogen adsorption, and were used to catalyze the epoxidation of propylene to propylene oxide (PO) with in situ prepared ethylbenzene hydroperoxide (EBHP). CVD time and CVD temperature affected the catalyst performance significantly. The optimum temperature range was 800-900 °C, and the optimum deposition time was 2.5-3 h. The maximum PO yields obtained in a batch reactor were 87.2, 94.3, and 88.8% for Ti/Si02, Ti/ MCM-41, and Ti/MCM-48, respectively. Ti/MCM-41 had higher titanium... 

To lower the deposition temperature, CVD processes enhanced by plasma [48-58] and laser [55-58] have been investigated. Low-resistivity (< 40 pQ cm) TiN was deposited by Akahori et al. [59] using TiCL in an electron-cyclotron resonance (ECR) plasma process (Ts b = 540°C, microwave power = 2.8 kW). All films had stoichiometric composition with low chlorine concentrations of 0.16 at. % as determined by ICP-MS. This indicates that the nitridation reaction of TiCU is enhanced enormously by the ECR plasma. 

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