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HVPE Growth of GaN on Porous SiC Substrates

Ioffe Physico-Technical Institute, St Petersburg 194021, Russia [Pg.171]

Porous Silicon Carbide and Gallium Nitride Epitaxy, Catalysis, and Biotechnology Applications Edited by Randall M. Feenstra and Colin E.C. Wood 2008 John Wiley Sons, Ltd [Pg.171]

In this chapter, various aspects of the growth of GaN films on porous SiC (PSC) by hydride vapor phase epitaxy (HVPE) are discussed (here, we understand that a porous SiC substrate is a SiC wafer with a several micrometer-thick porous layer in it). First, the preparation of PSC substrates under various conditions, and the properties of the PSC fabricated are described. Next, mechanisms of formation of different types of PSC structure and the stability of porous substrates under thermal and plasma treatment are considered. The final part of the chapter treats GaN epitaxial growth, film properties, and explanations for improved epitaxy provided by porous substrates. [Pg.172]

See other pages where HVPE Growth of GaN on Porous SiC Substrates is mentioned: [Pg.171]    [Pg.173]    [Pg.175]    [Pg.177]    [Pg.179]    [Pg.191]    [Pg.197]    [Pg.205]    [Pg.211]    [Pg.171]    [Pg.173]    [Pg.175]    [Pg.177]    [Pg.179]    [Pg.191]    [Pg.197]    [Pg.205]    [Pg.211]    [Pg.206]   


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GaN substrates

Growth of GaN on Porous SiC

Growth substrates

On porous

SiC substrates

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