Growth of GaN on Porous SiC

It is possible that the porous substrates could reduce the defect density in GaN by acting as compliant substrates or facilitating the GaN NHE process. However, the only mechanism which has been observed to improve the GaN quality on porous substrate is the GaN nano-ELO process [31,40]. The main advantages of GaN nano-ELO on porous substrates include (i) fast surface coalescence of overgrown GaN due to the nano-scale lateral growth length (ii) most TDs can be confined inside a small thickness above the porous substrate and (iii) foreign masks are not necessary and introduction of impurities into GaN can be reduced. 

SiC substrate, completely eliminating the possibility of GaN growth inside the pores. It should be noted that every piece of porous SiC substrate has two regions, a porous area located in the center and a surrounding planar part on the edge which is not in contact with the etch due to the design of the etch vessel. This allows a comparative analysis of growth on the porous part and the standard part of SiC. 

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In this chapter, we have discussed the MBE growth of GaN on porous SiC. We discussed the morphology of porous SiC and the effect of hydrogen... 

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