Hopping phonon-activated

The carbon composite surface of the implanted polymer exhibits electrical and mechanical properties very different from those of the unimplanted polymer. Mechanical properties such as hardness and resistance to wear improve significantly. The enhanced conductivity is a result of phonon-activated hopping between either... 

The concept of a mobility edge has proved useful in the description of the nondegenerate gas of electrons in the conduction band of non-crystalline semiconductors. Here recent theoretical work (see Dersch and Thomas 1985, Dersch et al. 1987, Mott 1988, Overhof and Thomas 1989) has emphasized that, since even at zero temperature an electron can jump downwards with the emission of a phonon, the localized states always have a finite lifetime x and so are broadened with width AE fi/x. This allows non-activated hopping from one such state to another, the states are delocalized by phonons. In this book we discuss only degenerate electron gases here neither the Fermi energy at T=0 nor the mobility edge is broadened by interaction with phonons or by electron-electron interaction this will be shown in Chapter 2. 

Compared with the momentum of impinging atoms or ions, we may safely neglect the momentum transferred by the absorbed photons and thus we can neglect direct knock-on effects in photochemistry. The strong interaction between photons and the electronic system of the crystal leads to an excitation of the electrons by photon absorption as the primary effect. This excitation causes either the formation of a localized exciton or an (e +h ) defect pair. Non-localized electron defects can be described by planar waves which may be scattered, trapped, etc. Their behavior has been explained with the electron theory of solids [A.H. Wilson (1953)]. Electrons which are trapped by their interaction with impurities or which are self-trapped by interaction with phonons may be localized for a long time (in terms of the reciprocal Debye frequency) before they leave their potential minimum in a hopping type of process activated by thermal fluctuations. 

An X-ray photoelectron spectroscopic study of Ni(DPG)2I showed no evidence of trapped valence or any appreciable change in the charge on the metal upon oxidation.97 The site of partial oxidation and hence the electron transport mechanism is still unclear but one explanation of the relatively low conductivity is that the conduction pathway is metal centred and that the M—M distances are too long for effective orbital overlap. Electron transport could be via a phonon-assisted hopping mechanism or, in the Epstein—Conwell description, involve weakly localized electronic states, a band gap (2A) and an activated carrier concentration.101... 

Hence it is clear that an increase of the temperature of the optical phonons T activating the charge carrier hopping leads to an increase of the proton current... 

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