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Hole-transporting materials advantage

The main advantages that compound semiconductor electronic devices hold over their siUcon counterparts He in the properties of electron transport, excellent heterojunction capabiUties, and semi-insulating substrates, which can help minimise parasitic capacitances that can negatively impact device performance. The abiUty to integrate materials with different band gaps and electronic properties by epitaxy has made it possible to develop advanced devices in compound semiconductors. The hole transport in compound semiconductors is poorer and more similar to siUcon. Eor this reason the majority of products and research has been in n-ty e or electron-based devices. [Pg.370]


See other pages where Hole-transporting materials advantage is mentioned: [Pg.408]    [Pg.197]    [Pg.482]    [Pg.201]    [Pg.212]    [Pg.143]    [Pg.107]    [Pg.4]    [Pg.757]    [Pg.13]    [Pg.3575]    [Pg.299]    [Pg.310]    [Pg.135]    [Pg.303]    [Pg.528]    [Pg.135]    [Pg.163]    [Pg.3797]    [Pg.7]    [Pg.44]    [Pg.135]    [Pg.255]    [Pg.473]    [Pg.478]    [Pg.639]    [Pg.146]    [Pg.700]    [Pg.270]    [Pg.234]    [Pg.132]    [Pg.259]    [Pg.207]    [Pg.105]    [Pg.1122]    [Pg.42]    [Pg.296]    [Pg.158]    [Pg.164]    [Pg.45]    [Pg.273]    [Pg.275]    [Pg.168]    [Pg.143]    [Pg.18]    [Pg.278]    [Pg.137]    [Pg.34]   
See also in sourсe #XX -- [ Pg.251 ]




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