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Hard mask resist system

The adoption of HM processes in IC device manufacture started around the 45-nm technology node they are expected to become the dominant resist process technology in technology nodes 32 nm because of their compatibility with double-patterning technology as well as for the reasons stated above. [Pg.794]

The three main approaches to multilayer resist imaging systems (see Chapter 16 for details) include (i) hard mask (HM) processes, (ii) top surface imaging (TSI) processes requiring latent image formation only near the surface of the resist, thus circumventing any transparency requirements, and (iii) bilayer resist (BLR)... [Pg.391]

See other pages where Hard mask resist system is mentioned: [Pg.794]    [Pg.794]    [Pg.192]    [Pg.792]    [Pg.4325]    [Pg.10]    [Pg.345]    [Pg.94]    [Pg.190]    [Pg.293]    [Pg.54]    [Pg.693]    [Pg.722]    [Pg.77]    [Pg.1674]    [Pg.24]    [Pg.271]   
See also in sourсe #XX -- [ Pg.794 ]



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