Hall effect thin films

Temperature dependent Hall effect measurements have also been carried out in the temperature range 30 to 260 K on a K3C60 thin film [116]. For three... 

To resolve the problem applying methods of collimated atom beams, equilibrium vapour as well as radioactive isotopes, the Hall effect and measurement of conductivity in thin layers of semiconductor-adsorbents using adsorption of atoms of silver and sodium as an example the relationship between the number of Ag-atoms adsorbed on a film of zinc oxide and the increase in concentration of current carriers in the film caused by a partial ionization of atoms in adsorbed layer were examined. 

Due to the presence of the anomalous Hall effect (known also as the extraordinary or spin Hall effect), magnetotransport measurements provide valuable information on the magnetism of thin films. The Hall resistance / Haii is empirically known to be a sum of ordinary and anomalous Hall terms,... 

Wurtzite-structure ZnO thin films grown by a variety of deposition techniques, as well as commercially available single crystal bulk samples are discussed. Furthermore, data for ZnO thin films intermixed with numerous elements are reviewed. Most of the results are obtained by SE, which is a precise and reliable tool for measurements of the DFs. The SE results are supplemented by Raman scattering and electrical Hall-effect measurement data, as well as data reported in the literature by similar or alternative techniques (reflection, transmission, and luminescence excitation spectroscopy). 

X-ray and electron diffraction methods are applied in order to measure atomic distances in the crystal lattice and their changes. Hence, the diffraction methods are also basically suitable for measuring the strain/stress behaviour in thin films. However, since the film thickness and the crystallite size in thin films are small, some line broadening already arises from this. In order to determine what contribution the mechanical stresses have on the diffuse lines, careful analysis of the line profiles must be undertaken [148, 151]. This method is less suitable for routine determination of stresses in thin films. In some cases, it is possible though rarely applied to determine the stresses in the films through their influence on other, known film properties, at least approximately. Such properties are, for example, the position of an absorption edge [152], the Hall effect [153], electron spin resonance spectra [155] and in the case of superconducting films, variations in the critical transition temperature [156]. However, these effects can, unfortunately, also arise for other reasons, and thus these techniques can usually only be used as supplemental experiments. 

Hall and Williams [96] doped thin films of lead azide with T1 and Bi. There was no marked effect on the photodecomposition efficiency at 330 nm as compared to undoped films. However, both the spectral dependence of the rate and the optical absorption were altered by thallium. The incorporation of T1 (10 mole fractions) removed the 375 nm peak from the optical absorption spectra while the incorporation of Bi left the peak unaltered. Partial decomposition of films (0.1%) also removed the 375 nm peak (dotted curve. Figure 32). The results are consistent with the fact that the Tl " impurities require anion vacancies for charge compensation. This is equivalent to partial decomposition. They concluded that the peaks in the optical absorption curve and spectral photodecomposition curves are probably a result of charge-transfer excitons. Furthermore, peak separations may arise because of differences in the interaction energies of inequivalent lead and azide ions in the unit cell. The selective removal with decomposition of the 375 nm peak may indicate selective decomposition of the azide site having the highest valence band energy. The selective decomposition would reduce the density of states and thus the extinction coefficient for electronic transitions from that particular azide band. 

A. Carrington, D.J.C. Walker, A. P. Mackenzie, J. R. Cooper Hall effect and resistivity of oxygen-deficient YBa2Cu307 8 thin films, Phys. Rev. B A8, 13051-13059 (1993)... 

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