Glow discharge deposition

Greenberg, K.E., Abnormal-Glow-Discharge Deposition offung-sten, M/ / . Phys. Lett, 50(16) 1050-1052 (April 20,1987)... 

Fig. 1. Sketch of a capacitively coupled glow discharge deposition system (Knights et al., 1978).

Fig. 6. NMR lineshape for glow discharge deposited a-Si H film grown at 25°C. The top curve is the experimental data and the middle and bottom curves are the deconvolution of the data into broad and narrow components (Reprinted with permission from Reimer et al., 1981a, Pergamon Press, pic).

Detailed descriptions of the rf and dc glow-discharge deposition techniques are presented by Hirose and Uchida in Volume 21 A, Chapters 2 and 3. 

Renewed interest in the optical properties of silicon films prepared by various new methods, like chemical vapor deposition (CVD), glow-discharge deposition, and sputter deposition, also stimulated investigations of the characteristics of these films for optical recording. 

Fig. 6. Columnar growth in glow-discharge-deposited a-Si H. The TEM micrographs of (a) reveal the film structure from a silane glow discharge on the top and from a 5% SiH4-Ar mixture on the bottom, (b) shows an area with film growth distortion probably caused by surface defect. [From Knights and Lujan (1979).]...

In the first extended discussion of H spin-lattice relaxation in a-Si H, Carlos and Taylor (1980) described a characteristic minimun in the temperature dependence of near 40 ° K, which occurs in all glow-discharge deposited samples studied to date. Typical data (Taylor and Carlos 1980 Carlos and Taylor, 1982b) are shown in Fig. 10 for relatively pure samples (top curves) and samples containing 0.5 -2 at. % oxygen (bottom curves). The decays at any given temperature are exponential over one or two orders of magnitude. 

C) at which little hydrogen is incorporated. In doped films the same three ESR responses are observed in CVD a-Si H as in the sputtered or glow-discharge deposited films (Magarino a/., 1981,1982 Hasegawa et ai, 1979, 1980, 1981b). 

In an elegant set of experiments Abelson and de Rosny (1983) measured simultaneously the change in the contact potential difference V12 and in the sheet conductance Go of glow-discharge-deposited a-Si H during H2O adsorption (and desorption). 

Valdes, T.I., Ciridon, W., Ratner, B.D. and Bryers, D. 2008. Surface modification of a perfluo-rinated ionomer using a glow discharge deposition method to control protein adsorption. jggjgJenoA 29 1356-1366. 

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