Germanium spectroscopy

Cheshnovsky O, Yang S H, Pettiette C L, Craycraft M J, Liu Y and Smalley R E 1987 Ultraviolet photoelectron spectroscopy of semiconductor clusters silicon and germanium Chem. Phys. Lett. 138 119... 

Physical Properties. Raman spectroscopy is an excellent tool for investigating stress and strain in many different materials (see Materlals reliability). Lattice strain distribution measurements in siUcon are a classic case. More recent examples of this include the characterization of thin films (56), and measurements of stress and relaxation in silicon—germanium layers (57). 

Fig. 2. ATR spectra obtained as a function of angle of incidence from a polymethylmethacrylate (PMMA) film of thickness 0.5 p,m that was deposited onto a germanium hemi-cylinder. The solid line represents the ATR spectrum of PMMA while the squares represent the film thickness that was recovered from the infrared spectra using four different bands. Reprinted by permission of Society for Applied Spectroscopy from Ref. [4].

Langmuir-Blodged films have been deposited on many different substrates. The substrates used include different types of glass (such as quartz for UV-visible spectroscopy) CaF2 plates for transmission infrared spectroscopy silicon, germanium, and ZnSe plates for internal reflection infrared spectroscopy. For electrochemical applications, LB films... 

Matrix Infrared Spectroscopy of Intermediates with Low Coordinated Carbon, Silicon and Germanium Atoms... 

Solid-state detectors based on silicon- or germanium-diodes possess better resolution than gas counters, particularly when cooled with liquid nitrogen, but they allow only very low count rates. PIN diodes have also recently become available and have been developed for the instruments used in the examination of Martian soils (Sects. 3.3 and 8.3). A very recent development is the so-called silicon-drift detector (SDD), which has very high energy resolution (up to ca. 130 eV) and large sensitive detection area (up to ca. 1 cm ). The SNR is improved by an order of magnitude compared to Si-PIN detectors. Silicon drift detectors may also be used in X-ray florescence spectroscopy, even in direct combination with Mossbauer spectroscopy (see Sects. 3.3 and 8.3). 

Antiblock additives can be seen on the surface of films using optical microscopy or SEM. Identification can normally be achieved with internal reflection IR spectroscopy (e.g., with a germanium crystal to minimise sampling depth) or using an X-ray attachment with the electron microscope. 

Multinuclear ( H, 13C, nB) NMR spectroscopy is undoubtly the most useful and powerful method for the investigation of the organoboration of 1-alkynyltin, -germanium, and -silicon compounds allowing not only the structure of the final products to be determined but also the product ratio to be ascertained (Tables 6-8). 

Matrix infrared spectroscopy of intermediates with low coordinated carbon silicon and germanium... 

This layer is then analysed directly by internal reflectance infra-red spectroscopy. Since there is no handling of the sample, contamination is reduced to a minimum. However, only infra-red spectral analysis is possible with this system since the material absorbed on the germanium prism is always a mixture of compounds, and since the spectrophotometer used for the production of the spectra is not a high-precision unit, the information coming from this technique is limited. While identification of specific compounds is not usually possible, changes in spectra, which can be related to the time of day, season, or to singular events, can be observed. 

Anionic Rearrangement of Organosilicon and Germanium Compounds, 16, 1 Applications of 9mSn Mossbauer Spectroscopy to the Study of Organotin Compounds,... 

Optical elements, liquid crystalline materials in, 15 116—117 Optical emission spectra, 14 833-837 plutonium, 19 671—673 Optical emission spectroscopy (OES), archaeological materials, 5 742 Optical fiber(s), 13 391-392 24 618 defects in, 11 145 drawing of, 11 141-145 fabrication of, 11 135-141 health care applications for, 13 397 overcladding of, 11 144 remote measurements using, 14 234 in sensors, 22 270-271 sol-gel processing of, 11 144-145 strength of, 11 141-145 vitreous silica in, 22 444 Optical fiber sensors, 12 614-616 Optical germanium, 12 556... 

Germanium(iv) and tin(rv) compounds M(BH4)4 (M = Ge 51, Sn 52) have been synthesized by simple salt metathesis and characterized by IR spectroscopy.49 The cyclic Lewis acid/base adducts between (o-C6F4FIg)3 and [BH4]-, for example, [( -C6F4Hg)3(BFI4)2]2- 53 and [ ( -C6F4Hg)3 2(BH4)]- 54, have been characterized by IR and NMR spectroscopies.50... 

Chalcogenation of a divalent germanium compound with styrene sulfide has been examined as an alternative route to the first free germanethione Tbt(Tip)Ge = S 165142 (Scheme 32) and later on allowed the synthesis of new base-stabilized germanethiones 187 and 188156 [Eq. (37)]. Phenyl isocyanate also may serve as a sulfur source leading to 165, which was evidenced by electronic spectroscopy and underwent a subsequent [2 + 2] cycloaddition with phenyl isocyanate157 (Scheme 36). 

Terminal selenido complexes 181 and 182156 with a tetracoordinate germanium atom displayed downfield shifted signals in 77Se NMR spectroscopy (S 77Se = 1023.8 and 1115.6 ppm vs Me2Se, respectively) comparable to... 

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