Gate OLEDs

The thickness of the semiconducting layer and the length of the transistor chatmel are critical to the performance of the transistor, particularly the on-off ratio and driving voltages. However, the overlap S between the gate and the source and drain electrodes is effectively an unnecessary capacitor that adversely affects the switching speed of the device. This undesired overlap could mean the difference between the ability to make a small (4 by 4) or large (1000 by 1000) array of such devices in, for example, an OLED display device. 

Dicyanomethylidene-4H-pyran chromophores for OLED emitters, logic gates, and optical chemosensors 12CC6073. 

Dicyanomethyhdene-4H-pyran chromophores for OLED emitters, logic gates and optical chemosensors 12CC6073. Y-MethyHdene-6-valerolactones New reagents for palladium-catalyzed intermolecular cyclization reactions 12BCJ931. 

Silicon nitride thin Aims have also been applied as gate dielectrics for specific MIS memory devices, and as a moisture barrier for organic light-emitting diode (OLED) displays. 

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