Gate dielectrics solution-processed

Figure 5.12. The transfer characteristics of LTPS TFTs prepared using a solution-processed gate dielectric (bold solid line), using a solution-processed underlayer dielectric (broken line) and using a conventional process without solution processing (thin solid line), respectively. [Reproduced with permission from Ref. 24. Copyright 2007 Society for Information Display.]...

TABLE 5.3. Characteristics of TFTs with Solution-Processed Gate Dielectric and Underlayer Dielectric... 

Next, we fabricated TFTs whose ULD, channel Si, and gate dielectric were all solution-processed. The fabricated TFTs (TFT-4, 5, and 6) have similar solution-processed 50-nm-thick silicon films,1011 the details of which are described in Section 5.4. In addition, TFT-4 (n-channel) and TFT-5 (p-channel) have the SP-Si02 as both ULD and gate dielectric, which are fabricated using... 

For a solution-processed active interface, in which either the gate dielectric material is deposited from solution on to a solution-processible semiconducting material or vice versa, it is critical to avoid dissolution or swelling effects during deposition of the upper layer, which can lead to interfacial mixing and increased interface roughness. The preferred approach to achieve this is to choose orthogonal solvents for the deposition of the multilayer structure [23]. 

Compared with conventional photolithography, laser drilling is a dry process and keeps the surface of polyimide gate dielectric layer away from water, etching solution, or other solvent, which often degrade the polyimide surface. We have confirmed that the electronic performance of transistors with laser via holes is identical with that without laser via holes. 

Fluoroalkyl-substituted naphtalenetetracarboxyUc diimide can be processed into thin films from fluorinated solvents to yield mobilities of 0.01 cmWs (bottom gate FET with Si02 dielectric, and gold contacts) [57]. The ladder polymer poly(benzobi-simidazobenzophenanthroline) (BBL) has an electron affinity of 4.0-4.4 eV and can be solution processed into microcrystaUine thin films from Lewis and methanesulfonic... 

The preceding results point to the crucial role of the gate dielectric in determining the operational and shelf stability of the device. Several groups have recently reported very encouraging BTS and shelf lifetime data for solution-processed... 

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