Galvanomagnetic effects

In the frame of the itinerant model, the surface is represented by a potential barrier of various origins and shapes, in most cases treated as onedimensional problem (e.g., 56-60), without taking into account the potential variation in the plane of the surface3 [with the exception of (61) where this effect is qualitatively discussed in connection with the field ionization probability]. Obviously, the nonlocalized model is suitable and often used for the theoretical interpretation of the changes of the bulk properties of the metals caused by the surface effects (the changes of the electrical resistance, magnetic properties, galvanomagnetic effects, etc.). 

Richard J. Stirn, Band Structure and Galvanomagnetic Effects in III-V Compounds with Indirect Band Gaps... 

THL.19. I. Prigogine et P. Mazur, Thermodynamique des effets thermomagnetiques et galvano-magnetiques (Thermodynamics of the thermomagnetic and of the galvanomagnetic effects), J. Phys. 12, 616-620 (1951). 

Galvanomagnetic effects Pit (B) pik, electrical Pm, Hall effect piUm, magnetoresistance Pmmn, second-order... 

Song S.N., Wang X.K., Chang R.P., Ketterson J.B. Electronic Properties of graphite nanotubes from galvanomagnetic effects. Phys. Rev. Lett. 1994 72 697-700. 

R. J. Stim, Band Structure and Galvanomagnetic Effects in III-V Compounds with Indirect Band Gaps R. W. Ure, Jr., Thermoelectric Effects in III-V Compounds H. Piller, Faraday Rotation... 

An effect of external factors on giant magnetoresistance (GMR) for asymmetric layer structure metal/polymer/non-magnetic metal was investigated. The magnetostriction, galvanomagnetic effects and instability of contacts are not the reasons for GMR appearance. The conclusion on the injective nature of the GMR effect was drawn. 

Galvanomagnetic effects and instability of contacts as the reasons for GMR indication were excluded by the great number of measurements under variable conditions. Since the polymer used is quite sensitive to mechanical pressure [4], it is important to study the influence of mechanical factors in magnetic field. The most important factor is the magnetostriction of nickel, because other artefacts can be destroyed by careful experimental performance. 

Further insight into the mechanisms giving rise to galvanomagnetic effects could be obtained by a decomposition of the spin-orbit coupling. To demonstrate this, corresponding results for p and AMR ratio Ap/p are given in Figure 5.13. 

Beer, A. C., Galvanomagnetic Effects in Semiconductors, Academic Press, New York, 1963. 

Let us first define the transverse thermomagnetic and galvanomagnetic effects which are pertinent to the following discussion of thermomagnetic materials and devices. For this purpose it is convenient to refer to the diagrams shown in Fig. 1. 

Levin (1979) has studied the ternary compound CeCo2Si2. He reported the dependence of the spontaneous Hall effect and the magneto-resistance on the applied field. He observed anomalous galvanomagnetic effects due to an asymmetric distribution of charge carriers caused by their spin-orbit interaction with magnetic defects (Co clusters). 

Magnetic Magneto- Theimomagnetic mechanical effect effect Galvanomagnetic effect Magneto-optical effects... 

Although most of the galvanomagnetic effects discussed by Herring should be very small in low mobility semiconductors, his mathematical approach is relevant to amorphous semiconductors. 

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