Semiconductor mobility

Because the room temperature hopping mobility is low (< 10-5 m2 V-1 s-1) in contrast to that typical for band conduction ( 10-1 m2 V-1 s 1), hopping conductors are sometimes referred to as low-mobility semiconductors . Another important distinction between band and hopping conductors is the very different doping levels encountered. Whereas doping levels for silicon are usually in the parts per million range, in the case of hopping conductors they are more typically parts per hundred. 

Although the mechanism of conduction in lithium-doped NiO and other low-mobility semiconductors is a controversial matter, the simple polaron hopping model outlined above serves well as a basis for understanding conduction processes in many of the systems discussed later (eg Section 4.4.1). 

R. Konenkamp, Photoelectric Properties and Applications of Low-Mobility Semiconductors (Springer, Berlin Heidelberg Newyork, 2000)... 

For reasonable functioning of these low cost, low mobility semiconductor solar cells, a considerable amount of the photogenerated chemical potential epc — fv of the electron hole ensemble must be used for carrier transport. An acceptable charge collection may be achieved if the extraction times for electrons and/or holes are smaller than their recombination lifetimes, i.e.,... 

Wu, Y, P. Liu, S. Gardner, and B.S. Ong. 2005. Poly(3,3"-dialkylterthiophene)s Room-temperature, solution-processed, high-mobility semiconductors for organic thin-film transistors. Chem Mater 17 221-223. 

Although most of the galvanomagnetic effects discussed by Herring should be very small in low mobility semiconductors, his mathematical approach is relevant to amorphous semiconductors. 

Dtirkop, X, Brintlinger, X, and Fuhrer, M.S., 2002, Nanotubes are high mobility semiconductors, in Structural and Electronic Properties of Molecular Nanostructures H. Kuzmany, J. Fink, M. Mehring, and S. Roth (Eds.) (API Conference Proceedings, New York, 2002), pp. 242-246. 

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