Gallium electrical resistivity

From an optical viewpoint, on the other hand, the difference between semiconductors and insulators lies in the value of Eg. The admitted boundary is usually set at 3 eV (see Appendix A for the energy units) and materials with Eg below this value are categorized as semiconductors, but crystals considered as semiconductors like the wurtzite forms of silicon carbide and gallium nitride have band gaps larger than 3 eV, and this value is somewhat arbitrary. The translation into the electrical resistivity domain depends on the value of Eg, and also on the effective mass of the electrons and holes, and on their mobilities. The solution is not unique moreover, the boundary is not clearly defined. Semi-insulating silicon carbide 4H polytype samples with reported room temperature resistivities of the order of 1010flcm could constitute the... 

Pressure transducers based on the semiconductor materials on the basis of germanium, gallium antimonide, solid solutions of aluminum, and gallium arsenide have come into use lately. This type of pressure transducer, given in Figure 3.5, is sensitive to bulk compression and is characterised by low electric resistance, high sensitivity to pressure, and linear dependence of the electric resistance upon the pressure. Nonlinearity less than 1.5% is observed in the range up to 1000 bar. 

III.l [see also Eq. (17) and Fig. 2], and that in the presence of a faradaic reaction [Section III. 2, Fig. 4(a)] are found experimentally on liquid electrodes (e.g., mercury, amalgams, and indium-gallium). On solid electrodes, deviations from the ideal behavior are often observed. On ideally polarizable solid electrodes, the electrically equivalent model usually cannot be represented (with the exception of monocrystalline electrodes in the absence of adsorption) as a smies connection of the solution resistance and double-layer capacitance. However, on solid electrodes a frequency dispersion is observed that is, the observed impedances cannot be represented by the connection of simple R-C-L elements. The impedance of such systems may be approximated by an infinite series of parallel R-C circuits, that is, a transmission line [see Section VI, Fig. 41(b), ladder circuit]. The impedances may often be represented by an equation without simple electrical representation, through distributed elements. The Warburg impedance is an example of a distributed element. 

---