GaAs surface during electrochemical

Structure of the GaAs(lOO) Surface During Electrochemical Reactions Determined by Electrochemical Atomic Force Microscopy... [Pg.189]

Summary. Atomically resolved surface structures were observed at the van der Waals face of InSe and the (100) face of p- and n-GaAs electrodes in electrolyte solutions imder potential control by electrochemical atomic force microscope (AFM). The surface structure change of these electrodes during electrochemical reactions was followed. [Pg.253]

GaAs, CuInS2, CuInSe2- Semiconductor electrodes have received increasing attention as a consequence of their potential application in photoelectrochemical energy conversion devices. In order to achieve optimum efficiency, the knowledge of the surface composition plays a crucial role. Surface modifications may occur during operation of the photo electrode, or may be the result of a chemical or electrochemical treatment process prior to operation. [Pg.122]