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Ga and As

Calculations using pseudopotentials instead of dealing with all-electron problem rely on the validity of what is called Frozen Core Approximation as for the behavior of the charge densities of the valence electrons, it is expected to resemble the real (all-electron) charge distribution as closely as possible outside the core-region. [Pg.305]

Weaire Solid State Physics , Vol. 24, H. Ehrenreich et al., eds.. Academic Press (1970). [Pg.310]

Moruzzi, J. F. Janak, A. R. Williams, Calculated Electronic Properties of Metals , Pergamon Press, New York (1978). [Pg.310]

Martin, Ab initio Calculation of Phonon Spectra , J. T. Devreese et al., eds.. Plenum Press, New York [Pg.310]

Iji Proceedings of the International Conference on Neutron Scattering, Gatlingburg 1976 , R. M. Moon, ed., ORNL, Tennessee (1976), p. 195. [Pg.311]


The heat input to diyers is to a gas and as such takes place over a range of temperatures. Moreover, the gas is heated to a temperature higher than the boiling point of the liquid to be evaporated. The exhaust gases from the dryer will be at a lower temperature than the inlet, but again, the heat available in the exhaust will be available over a range of temperatures. The thermal characteristics of dryers tend to be design-specific and quite difierent in nature from both distillation and evaporation. [Pg.359]

A foam can be considered as a type of emulsion in which the inner phase is a gas, and as with emulsions, it seems necessary to have some surfactant component present to give stability. The resemblance is particularly close in the case of foams consisting of nearly spherical bubbles separated by rather thick liquid films such foams have been given the name kugelschaum by Manegold [175]. [Pg.519]

As an example, we show in Figure 3 a backscattering spectrum from GaAs (110), obtained vwth a 300-keV Li ion beam. This is a well-chosen test example of energy resolution, as the atomic numbers of the two constituents are quite close (31 and 33 for Ga and As, respectively). Not only are these two species well resolved, but the two common isotopes of Ga are also well separated. Note that the peaks are asymmetric due to contributions from lower layers. Resolving power of this kind surely will find many new applications in materials science. [Pg.508]

Helium is a monatomic gas and, as yet, no stable compounds of helium have been found. The attractive forces between the atoms of helium are unusually weak, as shown by the normal boiling point. To liquefy helium, it must be cooled to — 268.9°C or 4.2°K. No other element or compound has a boiling point as low. Helium has another distinction which reflects these weak forces it is the only substance known which cannot be solidified at any temperature unless it is subjected to pressure. Helium becomes solid at 1.1 °K at a pressure of 26 atmospheres. [Pg.91]

The poor solubility of coelenterazine in neutral aqueous buffer solutions often hampers the use of this compound in biological applications. The simplest way to make an aqueous solution is the dilution of a methanolic 3 mM coelenterazine with a large volume of a desired aqueous buffer solution. If the use of alcoholic solvents is not permitted, dissolve coelenterazine in a small amount of water with the help of a trace amount of 1 M NaOH or NH4OH, and then immediately dilute this solution with a desired aqueous buffer solution. However, because of the rapid oxidation of coelenterazine in alkaline solutions, it is recommended that the procedure be carried out under argon gas and as quickly as possible. [Pg.167]

In order that the value of the equilibrium constant does not change, K should equal fCp for this to happen pBj must decrease and/orpAB must increase, i.e., more of B2 and A2 will react to yield AB. A similar consequence would follow on the addition of the component B2 at equilibrium. Another factor can be the addition of an inert gas. This can be done at constant volume. In this case, since there is no change in the total volume, the concentrations of A2, B2 and AB will have the same individual values as before the addition of the inert gas and as such there will be no change in the reaction or in the value of the equilibrium constant. An alternative way of adding the inert gas is to do so at constant pressure. In this case, the addition will cause an increase in the number of moles in the gas mixture and this will merely lead to an increase in the total volume at constant temperature, without altering the initial quantities of A2 or B2. Since the mass law equation for this type of reac-... [Pg.253]

The heat input to dryers, as discussed in Chapter 10, is to a gas and, as such, takes place over a range of temperatures. [Pg.459]

The dopant concentration depends both on the isotopic abundance and on the neutron absorption cross-section. For natural Ge, a unit neutron flux produces a Ga and As concentration of [14,15] ... [Pg.325]

Fig. 3. (a) Partially resolved nuclear hyperfine structure in the p.SR spectrum for Mu in GaAs in an applied field of 0.3 T. The structure occurs in the line corresponding to 0 = 90° and Ms = —1/2. (b) Theoretical frequency spectrum obtained by exact diagonalization of the spin Hamiltonian using the nuclear hyperfine and electric quadrupole parameters in Table I for the nearest-neighbor Ga and As on the Mu symmetry axis. Both Ga isotopes, 69Ga and 71Ga, were taken into account. From Kiefl et al. (1987). [Pg.571]

The most convincing evidence for the BC model of Mu in III-V materials comes from the nuclear hyperfine structure in GaAs. The hyperfine parameters for the nearest-neighbor Ga and As on the Mu symmetry axis and the corresponding s and p densities are given in Table I. One finds a total spin density on the As(Ga) of 0.45 (0.38) with the ratio of p to 5 density of 23 (4) respectively. The fact that 83% of the spin density is on the two nearest-neighbor nuclei on the Mu symmetry axis agrees with the expectations of the BC model. From the ratios of p to s one can estimate that the As and Ga are displaced 0.65 (17) A and 0.14(6) A, respectively, away from the bond center. The uncertainties of these estimates were calculated from spin polarization effects, which are not known accurately, and they do not reflect any systematic uncertainties in the approximation. These displacements imply an increase in the Ga—As bond of about 32 (7)%, which is similar to calculated lattice distortions for Mu in diamond (Claxton et al., 1986 Estle et al., 1986 Estle et al., 1987) and Si (Estreicher, 1987). [Pg.589]

This would produce a crystal with a formula (Gaj xAsx/2jAsj /2, where the atoms occupying Ga sites are enclosed in parentheses. This model indicates that there are vacancies on both the Ga and As sublattices in the crystal. [Pg.145]

Methane, also referred to as marsh gas, is a gas composed of carbon and hydrogen with a chemical formula of CH4. It is the first member of the paraffin or alkane series of hydrocarbons. It is lighter than air, colorless, odorless, tasteless and is flammable. It occurs in natural gas and as a by-product of petroleum refining. In atmospheric burning no smoke production normally occurs. In air methane bums with a pale, faintly luminous flame. With excess air carbon dioxide and water vapor is formed during combustion, with an air deficiency carbon monoxide and water is formed. It forms an explosive mixture with air over a moderate range. Its primary uses are as a fuel and raw feedstock for petrochemical products. [Pg.34]

UPD of As on Au single crystals resulted in well-ordered atomic layers, as observed with TEED. In addition, subsequent UPD of Ga results in formation of an ordered GaAs monolayer. The sUiicture of the monolayer is similar to that for CdTe, in that it consists of a 1/2 ML each of Ga and As on Au(lOO). The observed LEED pattern, however, was not a c(2 X 2), but a p(2 X 2) structure (Fig. 43). This larger unit cell has been proposed to result from dimer formation in the top layer (Fig. 44), which is consistent with previous UHV studies of GaAs single crystal surfaces [335-339]. Those results concerned mostly the formation of a single monolayer of... [Pg.151]

By replacing Ga and As atoms with the same species, such as Si or Ge, the symmetry becomes higher. In Fig. E.4 the Si(llO) plane is shown as an example. The additional gliding symmetry operation means that by letting y— y + bl2 and x—> — x simultaneously, the function should not change. The only Fourier components satisfying this condition are... [Pg.362]

Zincblende structure with top Ga and As atoms rotated into, resp. out of surface, (keeping about constant mutual bond length, rotated by projected angle of 27°) Ga and As back bonds contracted by —2.5% and -3.6%, resp. [Pg.115]

Fig. 6.5. Perspective view, looking along surface of clean reconstructed GaAs(l 10) at left and GaAs(l 10) -h (1 X l)As at right. Open and shaded circles represent Ga and As atoms, respectively... Fig. 6.5. Perspective view, looking along surface of clean reconstructed GaAs(l 10) at left and GaAs(l 10) -h (1 X l)As at right. Open and shaded circles represent Ga and As atoms, respectively...
Fig. 5.20 (a) and (b) are POSAP composition maps of Ga and As at an interface of a GalnAs/InP quantum-well heterostructurc. (c) is a composition profile showing Ga and As concentrations across the interface. The approximate position of the interface is shown by arrows in these figures. Data are from Liddle et a/.130 (Courtesy of G. D. W. Smith.)... [Pg.361]

Similar to the analytical procedure for trace analysis in high purity GaAs wafers after matrix separation, discussed previously,52 the volatilization of Ga and As has been performed via their chlorides in a stream of aqua regia vapours (at 210 °C) using nitrogen as the carrier gas for trace/matrix separation.58 The recoveries of Cr, Mn, Fe, Ni, Co, Cu, Zn, Ag, Cd, Ba and Pb determined after a nearly quantitative volatilization of matrix elements (99.8 %) were found to be between 94 and 101 % (except for Ag and Cr with 80 %). The concentrations of impurities measured by ICP-DRC-MS (Elan 6100 DRC, PerkinElmer Sciex) after matrix separation were compared with ICP-SFMS (Element 2, Thermo Fisher Scientific) and total reflection X-ray fluorescence analysis (TXRF Phillips). The limits of detection obtained for trace elements in GaAs were in the low ngg-1 range and below.58... [Pg.269]

The gas phase equilibrated with the solid phase of GaAs may contain various kinds of gas molecules of Ga and As. It was confirmed that Asj and As. are the predominant gas molecules in this system. ... [Pg.233]


See other pages where Ga and As is mentioned: [Pg.435]    [Pg.288]    [Pg.647]    [Pg.809]    [Pg.304]    [Pg.323]    [Pg.348]    [Pg.324]    [Pg.68]    [Pg.96]    [Pg.96]    [Pg.96]    [Pg.97]    [Pg.208]    [Pg.83]    [Pg.436]    [Pg.570]    [Pg.588]    [Pg.589]    [Pg.35]    [Pg.202]    [Pg.81]    [Pg.981]    [Pg.67]    [Pg.304]    [Pg.196]    [Pg.121]    [Pg.360]    [Pg.160]    [Pg.269]    [Pg.231]   


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