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Full-sequence ECMP

The electrochemical removal of both bulk and remaining copper is referred to as full-sequence ECMP (FS-ECMP), and it has been investigated by many researchers [20,32]. In FS-ECMP the entire wafer has to be contacted to the anode throughout the polishing process. A conductive polishing pad provides a path for current to flow even when copper islands are formed and allows for residual copper to clear. The research focus has been on developing polishing... [Pg.334]

Several people in the IBM Semiconductor Research and Development Center including the alliance partners helped in reviewing this chapter for clarity and consistency and provided valuable input. The author would also like to thank the Applied Materials team who has been working on electrochemical-mechanical planarization for their continuous support during the development of the hybrid ECMP as well as for providing their inputs on the recent developments for full-sequence ECMP. In addition, the author gratefully acknowledge to the kind contribution from Manabu Tsujimura of Ebara on the comparison of ECP, ECP-DI, ECMP, and CMP. [Pg.341]


See other pages where Full-sequence ECMP is mentioned: [Pg.321]    [Pg.321]   
See also in sourсe #XX -- [ Pg.321 , Pg.334 , Pg.341 ]




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