Final deposition manner

Finally, the deposits were heat treated at U00°C for 5 minutes under a N2 atmosphere. X-ray fluorescence data confirmed the presence of Cd and Se in the deposits with no other detectable impurities. CdSe photoelectrodes, 10 cm in area (2x5 cm) were prepared in this manner with a success rate of about 50. ... 

In 1808 Sir Humphry Davy tried in vain to decompose zirconia with the electric current, but Berzelius (36) finally obtained the metal in 1824 by heating a dry mixture of potassium and potassium zirconium fluoride in a very small closed iron tube placed inside a platinum crucible. After the quiet reaction had taken place, he cooled the tube and placed it in distilled water, whereupon, to use his own words, There fell from the tube a black powder as fast as the salt dissolved, and at the same time there was evolved a small quantity of hydrogen.. . . The zirconium obtained in this manner is easily deposited. It can be washed with water without oxidizing. Washed and dried, it forms a black powder resembling charcoal, which cannot be compressed nor polished like a metal (15). 

Finally, considering that, in general, ZnO is known to be particularly sensitive to a humid environment (see paragraph 9.4.1.2), this feature should also be checked, in more detail, for the case of ZnO films deposited by CVD. In fact, Sang et al. [84] reported that in a humid environment, ZnO B films deposited by LP-CVD showed higher degradation than sputtered ZnO Ga films. On the other hand, Oerlikon Solar (formerly Unaxis Solar) [79] has proven that thin him silicon solar modules using LP-CVD ZnO as TCO layers can successfully pass the standard damp-heat test, provided they are encapsulated in an appropriate manner. 

This procedure can be used for continuous flow the gas mixture is brought into contact with a hot tungsten filament the halide is decomposed, and the resulting nitride deposited on the wire. Reaction temperatures in the range of 1500-2000°C are achieved by an incandescent filament over which the reaction mixture is being introduced. Only thermally stable nitrides can be prepared in this manner. Alternatively, the halide can be reached in N2/H2 on a hot surface or in a hot plasma generated electrically. The final compositions are dictated by the partial N2 pressures. 

To the best of the Publisher s knowledge the information contained in this book is accurate however, the Publisher assumes no responsibility nor liability for errors or any consequences arising from the use of the information contained herein. Final determination of the suitability of any information, procedure, or product for use contemplated by any user, and the manner of that use, is the sole responsibility of the user. The book is intended for informational purposes only. Tungsten deposition raw materials and processes could be potentially hazardous and due caution should always be exercised in the handling of materials and equipment. Expert advice should be obtained at all times when implementation is being considered. 

PVA and PAAc polymers obtained from Aldrich Chemical Co. were dissolved separately in distilled water under stirring at 80°C (PVA 15 wt% and PAAc 7.5 wt%). For hydrogel formation, the solutions are then mixed in such a manner that 80 wt% were PVA and 20 wt% PAAc. This mixture is stirred for 1 h at 60°C to manufacture a homogeneous solution (Arndt et al. 1999). The films of PVA/PAAc blends were deposited onto the Si wafer (Fig. 2a) or onto the backside of the silicon bending plate (Fig. 2c). A solution of a-amino propyltriethoxysilane was used as adhesion promoter. Finally, the dried hydrogel films were isothermaUy annealed in an oven at 130°Cfor20min. 

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