Ferroelectric materials, microelectronics applications

Recently, ferroelectric materials, especially in thin film form, have attracted the attention of many researchers. Their large dielectric constants make them suitable as dielectric layers of microcapacitors in microelectronics. They are also investigated for application in nonvolatile memory using the switchable dielectric polarization of ferroelectric material. To characterize such ferroelectric materials, a high-resolution tool is required for observing the microscopic distribution of remanent (or spontaneous) polarization of ferroelectric materials. 

Ferroelectric materials have numerous microelectronics applications, including capacitors (7,2), nonvolatile memory devices (2-4 electrooptic devices 1,4) and many others (5). The ferroelectrics described in this paper are Pb(ZrxTii x)03 (PZT), BaTi03, and YMn03. Here we investigate the use of a photochemical method for the direct deposition of these complex materials. 

Ferroelectric and dielectric materials comprise Volume 4. This volume contains reviews on pyroelectricity the fundamentals and applications, crystal growth, characterization and domain studies in lithium niobate and lithium tantalate ferroelectrics, bismuth vanadate, the electric field influence on acoustic waves, dielectric ceramics, and low dielectric constant materials for microelectronics interconnects. 

---