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Fermi energy surface

The Fermi energy is the energy of the highest-energy filled orbital, analogous to a HOMO energy. If the orbital is half-filled, its energy will be found at a collection of points in /c-space, called the Fermi surface. [Pg.270]

Figure 5.7. Schematic representation of the definitions of work function O, chemical potential of electrons i, electrochemical potential of electrons or Fermi level p = EF, surface potential %, Galvani (or inner) potential Figure 5.7. Schematic representation of the definitions of work function O, chemical potential of electrons i, electrochemical potential of electrons or Fermi level p = EF, surface potential %, Galvani (or inner) potential <p, Volta (or outer) potential F, Fermi energy p, and of the variation in the mean effective potential energy EP of electrons in the vicinity of a metal-vacuum interface according to the jellium model. Ec is the bottom of the conduction band and dl denotes the double layer at the metal/vacuum interface.
Only if one takes into account the solvent dynamics, the situation changes. The electron transfer from the metal to the acceptor results in the transition from the initial free energy surface to the final surface and subsequent relaxation of the solvent polarization to the final equilibrium value Pqj,. This brings the energy level (now occupied) to its equilibrium position e red far below the Fermi level, where it remains occupied independent of the position of the acceptor with respect to the electrode surface. [Pg.651]

Adsorption related charging of surface naturally affects the value of the thermoelectron work function of semiconductor [4, 92]. According to definition the thermoelectron work function is equal to the difference in energy of a free (on the vacuum level) electron and electron in the volume of the solid state having the Fermi energy (see Fig. 1.5). In this case the calculation of adsorption change in the work function Aiqp) in... [Pg.38]

In the case of Cu, the effects of the SIC on the band structure are summarized as follows [21], The width of the s-type band is not affected. The relative position of the d-bands with respect to the Fermi energy is lowered by 2 eV, and the width of the d-band is reduced by 15%. As a result, the electrons in the d-bands are more localized. The s-d hybridization near the Fermi energy is reduced. Consequently, I have got somewhat controversial results on the geometry of the Fermi surface. As reference,... [Pg.89]

When the sample is biased positively (Ub > 0) with respect to the tip, as in Fig. 9c, and assuming that the molecular potential is essentially that of the substrate [85], only the normal elastic current flows at low bias (<1.5 V). As the bias increases, electrons at the Fermi surface of the tip approach, and eventually surpass, the absolute energy of an unoccupied molecular orbital (the LUMO at +1.78 V in Fig. 9c). OMT through the LUMO at — 1.78 V below the vacuum level produces a peak in dl/dV, seen in the actual STM based OMTS data for nickel(II) octaethyl-porphyrin (NiOEP). If the bias is increased further, higher unoccupied orbitals produce additional peaks in the OMTS. Thus, the positive sample bias portion of the OMTS is associated with electron affinity levels (transient reductions). In reverse (opposite) bias, as in Fig. 9b, the LUMO never comes into resonance with the Fermi energy, and no peak due to unoccupied orbitals is seen. However, occupied orbitals are probed in reverse bias. In the NiOEP case, the HOMO at... [Pg.202]

Metals are defined as materials in which the uppermost energy band is only partly filled. The uppermost energy level filled is called the Fermi energy or the Fermi level. Conduction can take place because of the easy availability of empty energy levels just above the Fermi energy. In a crystalline metal the Fermi level possesses a complex shape and is called the Fermi surface. Traditionally, typical metals are those of the alkali metals, Li, Na, K, and the like. However, the criterion is not restricted to elements, but some oxides, and many sulfides, are metallic in their electronic properties. [Pg.462]

Figure 12.6 Plot showing the formation of semiconductor surface band bending when a semiconductor contacts a metal (Ec, the bottom of conduction band Ev, the top of valence band EF, the fermi energy level SC, semiconductor M, metal Vs, the surface barrier). (From Liqiang, J. et al., Solar Energy Mater. Solar Cells, 79, 133, 2003.)... Figure 12.6 Plot showing the formation of semiconductor surface band bending when a semiconductor contacts a metal (Ec, the bottom of conduction band Ev, the top of valence band EF, the fermi energy level SC, semiconductor M, metal Vs, the surface barrier). (From Liqiang, J. et al., Solar Energy Mater. Solar Cells, 79, 133, 2003.)...
A58, 727 (2002). Quantum Calculation of Highly Excited Vibrational Energy Levels of CS2(X) on a New Empirical Potential Energy Surface and Semiclassical Analysis of 1 2 Fermi Resonances. [Pg.344]

Surface states or resonances have to be present near the Fermi energy in the electronic surace band structure. [Pg.266]


See other pages where Fermi energy surface is mentioned: [Pg.595]    [Pg.602]    [Pg.171]    [Pg.152]    [Pg.1309]    [Pg.1177]    [Pg.135]    [Pg.246]    [Pg.78]    [Pg.394]    [Pg.594]    [Pg.649]    [Pg.649]    [Pg.651]    [Pg.79]    [Pg.50]    [Pg.130]    [Pg.515]    [Pg.516]    [Pg.524]    [Pg.228]    [Pg.111]    [Pg.166]    [Pg.28]    [Pg.819]    [Pg.254]    [Pg.703]    [Pg.710]    [Pg.43]    [Pg.151]    [Pg.171]    [Pg.256]    [Pg.152]    [Pg.305]    [Pg.406]    [Pg.406]    [Pg.4]    [Pg.90]    [Pg.124]   
See also in sourсe #XX -- [ Pg.12 , Pg.107 , Pg.108 , Pg.109 , Pg.110 , Pg.111 , Pg.112 , Pg.113 , Pg.114 , Pg.115 , Pg.116 , Pg.117 , Pg.118 , Pg.121 , Pg.128 , Pg.132 , Pg.142 , Pg.143 , Pg.144 , Pg.145 , Pg.146 , Pg.147 , Pg.148 , Pg.149 , Pg.150 , Pg.436 ]




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