Fabrication methods reaction bonding

Unidirectional carbon fiber reinforced SiC/C composites were fabricated by Tani et al [213] using reaction bonding. The prepreg for the composites was prepared by the filament winding method, with a mixed slurry of phenolic resin, sihcon powder and ethyl alcohol, then die pressed at 130°C and sintered in Ar. The formation of SiC took place through a reaction between the carbon from the pyrolyzed phenolic resin and the silicon powder above a temperature of about 1320°C and was completed by 1420°C. The bulk density of the composites was about 1.7 gcm. The average flexural strength of the composites with a Si/C ratio of 0.2, 0.4 and 1 was about 310, 250 and 150 MPa respectively. 

Adsorption of Terminal Olefins on H Si(m) Since 1995 when Linford etal. first reported the fabrication methods of long alkyl chains (>10 carbons) [6], the reaction between H Si(lll) and terminally double-bonded olefins (1-alkenes) has been accepted as a practical method of organic deposition. The adlayer of long alkyl chains is robust and convenient to stabilize Si surfaces and to make modifications over the adsorbates. The deposition reaction was activated by the coexistence of a radical initiator in liquid phase [6], by heating [6], by light irradiation [46-48], or by using Lewis-acid catalysis. Use of diluted olefins in an inert solvent (such as saturated alkanes) improves the quality of the alkyl adlayer [49]. 

Ethanol electro-oxidation/cyclic voltammetry Pt-black, Pt/Ru KOH solution Electrodes prepared by wet fabrication method Oxide layer formation is confirmed. Pt/Ru is more active than Pt-black. C-C bond cleavage is not observed. Reaction mechanism is predicted Verma et al. (2005e)... 

Besides reactions with alkali salts, there are several groups investigating metal-ligand bond formation by mechanochemical methods. For example Orita et al. have shown that the supramolecular self-assembly of a number of complexes can take place under solvent-free conditions, leading to higher-order fabrications of two- or three-dimensional topology and even double... 

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