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Erbium-258, band structure

As was earlier reported, flexible properties of sol-gel technology may be used for modification of PLE spectra of the incorporated lanthanides. In particular, appearance of the strong band at PLE spectrum at 360 nm for the emission wavelength 1.54 pm was observed for the erbium-doped monolith xerogel silica-titania or titania/opal structure [3,4], However, in ftie case of excitation terbium in composite YAG/titania xerogel/opal the obtained PLE... [Pg.202]

The corresponding samarium, holmium and erbium complexes have been made in the same way by Tsutsui and Ely (1975b), which show also an IR band at 1533 cm" for the delocalized allyl stretching vibration. But the complete structure of these compound is not clear. Additional bands in the optical spectra of the tetrahydro-... [Pg.505]

The cost of 99.9% erbium metal is about 21/g. Erbium is finding nuclear and metallurgical uses. Added to vanadium, for example, erbium lowers the hardness and improves workability. Most of the rare-earth oxides have sharp absorption bands in the visible, ultraviolet, and near infrared. This property, associated with the electronic structure, gives beautiful pastel colors to many of the rare-earth salts. Erbium oxide gives a pink color and has been used as a colorant in glasses and porcelain enamel glazes. [Pg.714]

EDMR has allowed several different unusual experiments. For example, neutral arsenic dopants interacting with a 2D electron gas have been studied with continuous-wave EDMR at 9.7 GHz and 94 GHz. The Anderson-Mott transition between conduction by sequential tunneling through isolated dopant atoms, and conduction through thermally activated impurity Hubbard bands has been studied in arrays of a few arsenic dopant atoms in a silicon transistor. Single erbium spins with resolved hyperfine structure have been electrically detected after resonant optical excitation. The use of the valley degree of freedom has been eonsidered with dopants in silicon both experimentally and theoretically. The quantum confinement due to silicon nanowires may inerease the temperatures where silicon donor quantum devices ean operate. ... [Pg.72]


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See also in sourсe #XX -- [ Pg.292 , Pg.293 ]




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