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Energy levels covalent solids

The high electrical conductivity of metals as well as the high electron (and hole) mobility of inorganic covalently bound semiconductors have both been clarified by the band theory [I9, which slates that the discrele energy levels of individual atoms widen in the solid stale into alternatively allowed and forbidden bands. The... [Pg.565]

The concepts which we need for understanding the structural trends within covalently bonded solids are most easily introduced by first considering the much simpler system of diatomic molecules. They are well described within the molecular orbital (MO) framework that is based on the overlapping of atomic wave functions. This picture, therefore, makes direct contact with the properties of the individual free atoms which we discussed in the previous chapter, in particular the atomic energy levels and angular character of the valence orbitals. We will see that ubiquitous quantum mechanical concepts such as the covalent bond, overlap repulsion, hybrid orbitals, and the relative degree of covalency versus ionicity all arise naturally from solutions of the one-electron Schrodinger equation for diatomic molecules such as H2, N2, and LiH. [Pg.50]

In the early 1990s, Brenner and coworkers [163] developed interaction potentials for model explosives that include realistic chemical reaction steps (i.e., endothermic bond rupture and exothermic product formation) and many-body effects. This potential, called the Reactive Empirical Bond Order (REBO) potential, has been used in molecular dynamics simulations by numerous groups to explore atomic-level details of self-sustained reaction waves propagating through a crystal [163-171], The potential is based on ideas first proposed by Abell [172] and implemented for covalent solids by Tersoff [173]. It introduces many-body effects through modification of the pair-additive attractive term by an empirical bond-order function whose value is dependent on the local atomic environment. The form that has been used in the detonation simulations assumes that the total energy of a system of N atoms is ... [Pg.167]

The standard method of adjusting the conductivity of a semiconductor and choosing the nature (electrons or holes) of the dominant, majority, carriers is by controlled doping. Dopants are incorporated into the solid s covalent bond network. This allows the construction of p-n junctions in which the concentration profiles of the dopants, and therefore the spatial dependence of the energy-level positions, remain stable despite the existence of high internal electric fields, p-n junctions have been the basic element of many electronic components [230]. [Pg.601]

The coefficients from Table 2-1 and atomic term values from Table 2-2 will suffice for calculation of an extraordinarily wide range of properties of covalent and ionic solids using only a standard hand-held calculator. This is impressive testimony to the simplicity of the electronic structure and bonding in these systems. Indeed the. same parameters gave a semiquantitativc prediction of the one-electron energy levels of diatomic molecules in Table 1-1. However, that theory is intrinsically approximate and not always subject to successive correc-... [Pg.53]

We normally define the energy level of electrons in a solid in terms of the Fermi level, eF, which is essentially equivalent to the electrochemical potential of electrons in the solid. In the case of metals, the Fermi level is equal to the highest occupied level of electrons in the partially filled frontier band. In the case of semiconductors of covalent and ionic solids, by contrast, the Fermi level is situated within the band gap where no electron levels are available except for localized ones. A semiconductor is either n-type or p-type, depending on its impurities and lattice defects. For n-type semiconductors, the Fermi level is located close to the conduction band edge, while it is located close to the valence band edge for p-type semiconductors. For examples, a zinc oxide containing indium as donor impurities is an n-type semiconductor, and a nickel oxide containing nickel ion vacancies, which accept electrons, makes a p-type semiconductor. In semiconductors, impurities and lattice defects that donate electrons introduce freely mobile electrons in the conduction band, and those that accept electrons leave mobile holes (electron vacancies) in the valence band. Both the conduction band electrons and the valence band holes contribute to electronic conduction in semiconductors. [Pg.535]


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Covalent solids

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