Element map images

Figure 7.6 Histograms of the thickness distribution of (a) graphene sheets in 3D graphene material and (b) PEDOT/graphene sheets. Element mapping images of (c)...

Fig. 17 STEM-EDX elemental mapping images of Cui94S-ZnS-Cui94S heteronanostructures, Reproduced from ref, 153 with permission from the Elsevier John Wiley Sons.

Figure 3.13 Representative HAADF-STEM image (top left panel) of the AuPd(1 0.61)/C and its corresponding Pd (red) and Au (green) elemental mapping image. (For interpretation of the references to color in this figure legend, the reader is referred to the online version of this book.)...

The variations of Auger signal intensity for Si-LW, 0-KLL and C-KLL were measured across the surface of the native oxide film. In order to obtain the clear element map images of SAM methods, the normal of the sample surface was also tilted as in the SEM observations, and integral Auger spectra were used in lieu of the conventional derivative Auger spectra. 

Layer structure of Alloy 602CA after 50 h at position C corresponding to material temperatures between 980°C and 1010°C (see Fig. 23.4) backscattered electron image and elemental maps. The bar in each elemental map image describes the colour scale between the minimum and maximum intensity of the corresponding X-ray line. 

High magnification imaging and composition (elemental) mapping... 

Figure 2 Micrographs of the same region of a specimen in various imaging modes on a high-resolution SEM (a) and (b) SE micrographs taken at 25 and 5 keV, respectively (c) backscattered image taken at 25 keV (d) EDS spectrum taken from the Pb-rich phase of the Pb-Sn solder (e) and (f) elemental maps of the two elements taken by accepting only signals from the appropriate spectral energy regions.

If an incident electron beam of sufficient energy for AES is rastered over a surface in a manner similar to that in a scanning electron microscope (SEM), and if the analyzer is set to accept electrons of Auger energies characteristic of a particular element, then an elemental map or image is again obtained, similar to XPS for the Quantum 2000 (Sect. 2.1.2.5). 

In the scanning (or microprobe) mode the image is measured sequentially point-bypoint. Because the lateral resolution of the element mapping in scanning SIMS is dependent solely on the primary beam diameter, LMISs are usually used. Beam diameters down to 50 nm with high currents of 1 nA can be reached. 

Element mapping with non-resonant laser- SNM S can be used to investigate the structure of electronic devices and to locate defects and microcontaminants [3.114]. Typical SNMS maps for a GaAs test pattern are shown in Fig. 3.43. In the subscript of each map the maximum number of counts obtained in one pixel is given. The images were acquired by use of a 25-keV Ga" liquid metal ion source with a spot size of approximately 150-200 nm. For the given images only 1.5 % of a monolayer was consumed -"static SNMS". 

Fig. 5.16 (A) Bright-field TEM image and (B) element mapping carbon (brighter contrast corresponds to higher concentration of carbon) of ZnO synthesized in aqueous solution at 37 °C in pH 8 buffer for 4 h in the presence of 1.2 mgmL-1 of gelatin. The inset shows the electron diffraction pattern taken parallel to the platelet normal. (Reprinted with permission from [77], Copyright (2006) American Chemical Society).

Four samples were similarly selected for the EPMA experiments. The samples were dried and embedded in polished epoxy cylindrical plugs. Backscattered electron (BSE) images as well as elemental maps of As, Fe and Ni (EDS/WDS) were collected using a JEOL 8600 Superprobe electron microprobe analyzer (Dept, of Geological Sciences, University of Saskatchewan). 

Overall the spheres were of good quality judging from images obtained and could be used for filling with sodium alanate. However, to confirm through wall open porosity formation across the spheres wall, approximately 900 A cross section was made across a sphere wall and SEM and elemental mapping was conducted and Fig. 3 shows the results obtained. 

Fig. 1. Left side microphotographs of visible gold occurrences in relation to pyrite crystals. Right side related micro-XRF elemental mapping of As and spot location of LA-ICP-MS analyses with As values (ppm). The exact location of the micro-XRF map is indicated by the white square on the microphotographs (left side). On right side images, the light grey pixels indicate a relative enrichment of As in pyrites. For reference, the white contorted lines are the pyrite crystal borders. White and black spots are As-rich and As-poor portions of pyrites respectively. Note the discordant aspect of the As-enrichment corridors relative to the pyrite crystals and the sharp transition from As-poor and As-rich zones indicated by the LA-ICP-MS analytical As values.

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