Electronics electromigration

Electrical Properties. Generally, deposited thin films have an electrical resistivity that is higher than that of the bulk material. This is often the result of the lower density and high surface-to-volume ratio in the film. In semiconductor films, the electron mobiHty and lifetime can be affected by the point defect concentration, which also affects electromigration. These effects are eliminated by depositing the film at low rates, high temperatures, and under very controUed conditions, such as are found in molecular beam epitaxy and vapor-phase epitaxy. 

If the p labels refer to lattice sites j, this matrix reduces to 6(k) in the KKR matrix M(k) and Eq. (15) can be shown to reduce to Eq. (14). The evaluation of is hindered by the free-electron poles in the b matrices. This has formed a barrier for electronic structure calculations of interstitial impurities, but in some cases this problem was bypassed by using an extended lattice in which interstitial atoms occupy a lattice site. For the calculation of Dingle temperatures [1.3] and interstitial electromigration [14] the accuracy was just sufficient. Recently this accuracy problem has been solved [15, 16]. 

A break junction can also be created by passing a current (0.5-1.0 V) through an Au nanowire (<20 nm diameter) defined by electron-beam lithography and shadow evaporation. Such electromigrated break junctions (EMBJs) have yielded reproducible 1-3 nm gaps between electrodes [48-50]. 

Electric sector, 295 Electrochromatography, 119 Electrode potential, 348 Electromagnetic separator, 294 Electromigration, 114, 117 Electron capture detector, 36 Electron ionisation, 307 Electro-osmosis, 115 Electro-osmotic flow, 114 Electrophoregram, 113 Electrophoretic mobility, 114 Electrospray, 312 ELISA, 336... 

An applied electrical potential gradient can induce diffusion (electromigration) in metals due to a cross effect between the diffusing species and the flux of conduction electrons that will be present. When an electric field is applied to a dilute solution of interstitial atoms in a metal, there are two fluxes in the system a flux of conduction electrons, Jq, and a flux of the interstitials, J. For a system maintained at constant temperature with Fq = -V = E, Eq. 2.21 gives... 

The vacancy current is therefore due solely to the cross term arising from the current of conduction electrons (which is proportional to E). The coupling coefficient for the vacancies is the off-diagonal coefficient Lvq which can be evaluated using the same procedure as that which led to Eq. 3.54 for the electromigration of interstitial atoms in a metal. Therefore, if (5V) is the average drift velocity of the vacancies induced by the current and Mv is the vacancy mobility,... 

Tachibana A (2002) First- Principle Theoretical Study on the Dynamical Electronic Characteristics of Electromigration in the Bulk, Surface and Grain Boundary. In Baker SP (ed) Stress Induced Phenomena in Metallization. American Institute of Physics, New York, pp 105-116... 

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