Electronic demand sensitivity parameter

The electronic demand sensitivity parameter. It adjusts the delocalized effect of a group to meet the electronic demand of the system. 

The intrinsic delocalized (resonance) electrical-effect parameter. It represents the delocalized electrical effect in a system with zero electronic demand, ffe The electronic demand sensitivity parameter. It adjusts the delocalized effect of a group to meet the electronic demand of the system, ffp A composite delocalized electrical-effect parameter which is a function of and (Tj.Examples of Cd constants are the o-r and % constants.The o-r i constants, where k designates the value of the electronic demand q, are also examples of [Pg.435]

The LDR equation may be written as in equation (21), where Qx is the property influenced by the substituent X, <7/ is the localized effect parameter, identical to delocalized effect parameter for minimal electronic demand of the active site, and gives the sensitivity of X to changes in electronic demand of the active site h is the intercept term. 

Since the detector and electronics are relied upon to accurately analyze the x-ray spectrum in the Si(Li) spectrometer, the performance requirements on the associated electronics are far more demanding than for the NaI(Tl) detector or the proportional counter. This is particularly true since the energy resolution of the Si(Li) detector is much better than the resolution of the other two detectors. Furthermore, it becomes more important for spectroscopists to understand the operating limitations peculiar to the Si(Li) x-ray spectrometer, so that they can avoid faulty data. The purpose of Sec. 4.3.1 to 4.3.9 is to delineate the operating parameters of the system so that the spectroscopist becomes sensitive to where the boundaries between reliable operation and faulty answers may lie for a particular instrument. 

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